Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection

2010 ◽  
Vol 28 (3) ◽  
pp. C3G13-C3G18 ◽  
Author(s):  
E. Plis ◽  
A. Khoshakhlagh ◽  
S. Myers ◽  
H. S. Kim ◽  
N. Gautam ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Infrared Detection ◽  
Molecular Beam Epitaxy Growth ◽  
Type Ii ◽  
Strained Layer ◽  
Long Wave ◽  
Strained Layer Superlattices ◽  
Long Wave Infrared

scholarly journals MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES

1993 ◽  
Vol 42 (7) ◽  
pp. 1121
Author(s):  
ZHOU GUO-LIANG ◽  
SHENG CHI ◽  
FAN YONG-LIANG ◽  
JIANG WEI-DONG ◽  
YU MING-RBN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer ◽  
Strained Layer Superlattices

Molecular beam epitaxy growth and characterization of mid-IR type-II “W” diode lasers

2005 ◽  
Vol 23 (3) ◽  
pp. 1119 ◽  
Author(s):  
C. L. Canedy ◽  
W. W. Bewley ◽  
G. I. Boishin ◽  
C. S. Kim ◽  
I. Vurgaftman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diode Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Type Ii

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

1985 ◽  
Vol 47 (10) ◽  
pp. 1099-1101 ◽  
Author(s):  
L. Goldstein ◽  
F. Glas ◽  
J. Y. Marzin ◽  
M. N. Charasse ◽  
G. Le Roux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Strained Layer Superlattices
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