The fabrication of back-gated high electron mobility transistors — a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90573-f ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 41-45 ◽

Author(s):

E.H. Linfield ◽

G.A.C. Jones ◽

D.A. Ritchie ◽

A.R. Hamilton ◽

N. Iredale

Keyword(s):

Electron Mobility ◽

Ion Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

Solid-State Electronics ◽

10.1016/j.sse.2013.09.001 ◽

2013 ◽

Vol 89 ◽

pp. 207-211 ◽

Author(s):

A. Alexewicz ◽

M. Alomari ◽

D. Maier ◽

H. Behmenburg ◽

C. Giesen ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Thermally Stable ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3581090 ◽

2011 ◽

Vol 29 (3) ◽

pp. 031204 ◽

Author(s):

Hyeongnam Kim ◽

Michael L. Schuette ◽

Wu Lu

Keyword(s):

Plasma Treatment ◽

Plasma Etching ◽

Electron Mobility ◽

Oxygen Plasma ◽

High Electron Mobility Transistors ◽

Oxygen Plasma Treatment ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4929818 ◽

2015 ◽

Vol 107 (8) ◽

pp. 081608 ◽

Author(s):

Xiaoye Qin ◽

Robert M. Wallace

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

Semiconductor Science and Technology ◽

10.1088/0268-1242/8/3/020 ◽

1993 ◽

Vol 8 (3) ◽

pp. 415-422 ◽

Author(s):

E H Linfield ◽

G A C Jones ◽

D A Ritchie ◽

J H Thompson

Keyword(s):

Electron Mobility ◽

Ion Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

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Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4896593 ◽

2014 ◽

Vol 32 (6) ◽

pp. 061202 ◽

Author(s):

Ya-Hsi Hwang ◽

Tsung-Sheng Kang ◽

Fan Ren ◽

Stephen J. Pearton

Keyword(s):

Electron Mobility ◽

Heat Dissipation ◽

High Electron Mobility Transistors ◽

Active Area ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3633104 ◽

2011 ◽

Vol 99 (9) ◽

pp. 093504 ◽

Author(s):

Xinke Liu ◽

Edwin Kim Fong Low ◽

Jisheng Pan ◽

Wei Liu ◽

Kie Leong Teo ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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A Novel Approach to Improve Heat Dissipation of AlGaN/GaN High Electron Mobility Transistors with a Backside Cu Via

ECS Transactions ◽

10.1149/06601.0223ecst ◽

2015 ◽

Vol 66 (1) ◽

pp. 223-230

Author(s):

Y.-H. Hwang ◽

T.-S. Kang ◽

F. Ren ◽

S. J. Pearton

Keyword(s):

Electron Mobility ◽

Heat Dissipation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer

ACS Applied Materials & Interfaces ◽

10.1021/acsami.1c01241 ◽

2021 ◽

Author(s):

Anwar Siddique ◽

Raju Ahmed ◽

Jonathan Anderson ◽

Mark Holtz ◽

Edwin L. Piner

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Passivation Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3064557 ◽

2021 ◽

Vol 9 ◽

pp. 348-352

Author(s):

Weihang Zhang ◽

Liyu Fu ◽

Xi Liu ◽

Jincheng Zhang ◽

Shenglei Zhao ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A Novel Approach to Improve Heat Dissipation of AlGaN/GaN High Electron Mobility Transistors with a Backside Cu Via

ECS Meeting Abstracts ◽

10.1149/ma2015-01/23/1461 ◽

2015 ◽

Keyword(s):

Electron Mobility ◽

Heat Dissipation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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