Low temperature deposition of amorphous silicon oxide and silicon nitride films

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

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The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 $^{\circ}{\hbox{C}}$) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/tsm.2010.2045582 ◽

2010 ◽

Vol 23 (2) ◽

pp. 328-339

Author(s):

Yuji Saito ◽

Katsuyuki Sekine ◽

Ryu Kaihara ◽

Masaki Hirayama ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Growth Rates ◽

Silicon Oxide ◽

Semiconductor Device ◽

High Growth ◽

Device Fabrication ◽

Plasma System ◽

Silicon Nitride Films ◽

Density Plasma

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Low Temperature Fourier Transform Infrared Spectroscopic Studies of Hydrogenated Amorphous Silicon Nitride Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.176 ◽

1992 ◽

Vol 31 (Part 1, No. 2A) ◽

pp. 176-180 ◽

Cited By ~ 8

Author(s):

Man Mohan Pradhan ◽

Manju Arora

Keyword(s):

Fourier Transform ◽

Silicon Nitride ◽

Low Temperature ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Fourier Transform Infrared ◽

Spectroscopic Studies ◽

Amorphous Silicon Nitride ◽

Silicon Nitride Films ◽

Hydrogenated Amorphous

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Low-temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system

physica status solidi (a) ◽

10.1002/pssa.201600221 ◽

2016 ◽

Vol 213 (10) ◽

pp. 2575-2581 ◽

Cited By ~ 7

Author(s):

Benoît Baudrillart ◽

Fabien Bénédic ◽

Amel S. Melouani ◽

Filipe J. Oliveira ◽

Rui F. Silva ◽

...

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Antenna Array ◽

Diamond Films ◽

Nanocrystalline Diamond ◽

Low Temperature Deposition ◽

Nanocrystalline Diamond Films ◽

Distributed Antenna ◽

Temperature Deposition

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TEM Imaging of Amorphous Silicon Oxide - Silicon Nitride - Silicon Oxide Dielectric Films

Microscopy and Microanalysis ◽

10.1017/s1431927600032219 ◽

2001 ◽

Vol 7 (S2) ◽

pp. 1228-1229

Author(s):

Lew Rabenberg ◽

J. P. Zhou ◽

Kil-Soo Ko ◽

Rita Johnson

Keyword(s):

Thin Films ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Atomic Number ◽

Silicon Oxide ◽

Gate Dielectrics ◽

Dielectric Films ◽

Amorphous Silicon Oxide ◽

Nitride Oxide ◽

Silicon Based

Thin films of amorphous silicon oxide and silicon nitride are routinely used as gate dielectrics in silicon-based microelectronic devices. It is valuable to be able to image them and measure their thicknesses quickly and accurately. This brief note describes conditions that can be used to obtain accurate and reproducible TEM images of oxide-nitride-oxide (ONO) thin films.Obtaining adequate contrast differences between oxide and nitride is not trivial because they have the same average atomic number, and both phases are amorphous. As stoichiometric compounds, both SiO2 and Si3N4 would have average atomic numbers equal to 10. For SiO2, (14+2(8))/3=10, and for Si3N4, (3(14)+4(7))/7=10. Thus, the atomic number contrast between these two is weak or nonexistent. Similarly, the amorphous character prevents the use of conventional diffraction contrast techniques.However, the density of Si3N4 (3.2 g/cm3) is considerably greater than the density of SiO2 (2.6 g/cm3), reflecting the higher average coordination of N compared with O.

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