The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 $^{\circ}{\hbox{C}}$) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System

2010 ◽  
Vol 23 (2) ◽  
pp. 328-339
Author(s):  
Yuji Saito ◽  
Katsuyuki Sekine ◽  
Ryu Kaihara ◽  
Masaki Hirayama ◽  
Shigetoshi Sugawa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Growth Rates ◽  
Silicon Oxide ◽  
Semiconductor Device ◽  
High Growth ◽  
Device Fabrication ◽  
Plasma System ◽  
Silicon Nitride Films ◽  
Density Plasma

Low-temperature hydrolysis (oxidation) of plasma-deposited silicon nitride films

1989 ◽  
Vol 1 (2) ◽  
pp. 194-198 ◽  
Author(s):  
J. N. Chiang ◽  
S. G. Ghanayem ◽  
D. W. Hess
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Nitride Films

Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach

2018 ◽  
Vol 282 ◽  
pp. 152-157 ◽  
Author(s):  
Hu Shan Cui ◽  
Kai Hua Cao ◽  
You Guang Zhang ◽  
Hua Gang Xiong ◽  
Jia Qi Wei ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Magnesium Oxide ◽  
Building Block ◽  
Silicon Oxide ◽  
Process Integration ◽  
Electrical Contact ◽  
Device Fabrication ◽  
Integration Scheme ◽  
Ferromagnetic Metals ◽  
Wet Etch

In this work, a novel process integration scheme for p-MTJ devices’ passivation and contacting was proposed. The method can efficiently protect the ferromagnetic metals and the magnesium oxide which are the key building block of p-MTJs, and effectively make electrical contact with the interconnect metals for p-MTJs. The scheme consists of passivation of p-MTJs with dual dielectrics - silicon nitride and silicon oxide, followed by planarization and selective wet etch. The proposed integration scheme was successfully demonstrated with 80 nm size p-MTJ devices.

Low‐temperature cadmium telluride homoepitaxy at high growth rates

1989 ◽  
Vol 65 (5) ◽  
pp. 1932-1935
Author(s):  
N. W. Cody ◽  
U. Sudarsan ◽  
R. Solanki
Keyword(s):  
Low Temperature ◽  
Cadmium Telluride ◽  
Growth Rates ◽  
High Growth

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

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