Properties of Mn-doped p-type InxGa1-xAsyP1-y grown by liquid-phase epitaxy

1982 ◽  
Vol 25 (5) ◽  
pp. 359-365 ◽  
Author(s):  
Shigeo Fujita ◽  
Masaaki Kuzuhara ◽  
Mineto Yagyu ◽  
Akio Sasaki
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
P Type ◽  
Mn Doped

Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxy

1980 ◽  
Vol 51 (10) ◽  
pp. 5438 ◽  
Author(s):  
Shigeo Fujita ◽  
S.M. Bedair ◽  
M.A. Littlejohn ◽  
J.R. Hauser
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy ◽  
P Type

Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

scholarly journals Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

1993 ◽  
Vol 46 (2) ◽  
pp. 317 ◽  
Author(s):  
KSA Butcher ◽  
D Alexiev ◽  
TL Tansley
Keyword(s):  
Electron Beam ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Minority Carrier ◽  
Induced Current ◽  
Carrier Diffusion ◽  
Nuclear Science ◽  
Electron Beam Induced Current ◽  
P Type

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

P-type InP grown by liquid phase epitaxy from melts with rare earth admixtures

2002 ◽  
Vol 91-92 ◽  
pp. 38-42 ◽  
Author(s):  
K. Zdansky ◽  
O. Prochazkova ◽  
J. Zavadil ◽  
J. Novotny
Keyword(s):  
Rare Earth ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
P Type

Stoichiometry-dependent deep levels in undoped p-type Al0.38Ga0.62As grown by liquid phase epitaxy

1998 ◽  
Vol 27 (8) ◽  
pp. 979-984
Author(s):  
Hiroshi Watanabe ◽  
Mitsutake Motozawa ◽  
Ken Suto ◽  
Jun-Ichi Nishizawa
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Deep Levels ◽  
P Type
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