Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors

2006 ◽  
Vol 88 (24) ◽  
pp. 242108 ◽  
Author(s):  
Changtao Peng ◽  
NuoFu Chen ◽  
Fubao Gao ◽  
Xingwang Zhang ◽  
Chenlong Chen ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Infrared Detectors ◽  
Room Temperature

Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxy

1980 ◽  
Vol 51 (10) ◽  
pp. 5438 ◽  
Author(s):  
Shigeo Fujita ◽  
S.M. Bedair ◽  
M.A. Littlejohn ◽  
J.R. Hauser
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy ◽  
P Type

The superior performance of a Pt catalyst supported on nanoporous SiC–C composites for liquid-phase selective hydrogenation of cinnamaldehyde

RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 81211-81218 ◽  
Author(s):  
Ruihua Yao ◽  
Junrui Li ◽  
Peng Wu ◽  
Xiaohong Li
Keyword(s):  
Liquid Phase ◽  
Selective Hydrogenation ◽  
Room Temperature ◽  
Superior Performance ◽  
Pt Catalyst ◽  
Unsaturated Alcohol ◽  
Liquid Phase Hydrogenation

The Pt/SiC–C catalyst: active, selective (80% selectivity to unsaturated alcohol) and reusable for liquid-phase hydrogenation of cinnamaldehyde at room temperature.

Growth Peculiarities and Magnetic Properties of (LuBi)3Fe5O12 Films by LPE Method

2013 ◽  
Vol 200 ◽  
pp. 256-260 ◽  
Author(s):  
I.I. Syvorotka ◽  
Igor M. Syvorotka ◽  
S.B. Ubizskii
Keyword(s):  
Magnetic Properties ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Film Thickness ◽  
Faraday Rotation ◽  
Liquid Phase Epitaxy ◽  
Magnetization Reversal ◽  
Room Temperature ◽  
Mirror Surface ◽  
Different Types

The series of (LuBi)3Fe5O12 film were grown on (111) oriented GGG substrate with diameters 1, 2 and 3 inch by liquid phase epitaxy using Bi2O3-base flux. Different types of surface morphology on the grown films were observed. The films’ surface was smooth and mirror while the film thickness was less than 13 μm and becomes rough for thickness above this value. The grown films were characterized by measuring magnetization loops and magneto-optic Faraday rotation under magnetization reversal as well as ferromagnetic resonance (FMR). All films with mirror surface demonstrate the in-plane magnetization, high Faraday rotation and FMR linewidth about 0.8 Oe at 9.1 GHz and room temperature.

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1571-1574 ◽  
Author(s):  
Cole W. Litton ◽  
Ya.I. Alivov ◽  
D. Johnstone ◽  
Ümit Özgür ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Zno Films ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics ◽  
P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

scholarly journals Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

1993 ◽  
Vol 46 (2) ◽  
pp. 317 ◽  
Author(s):  
KSA Butcher ◽  
D Alexiev ◽  
TL Tansley
Keyword(s):  
Electron Beam ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Minority Carrier ◽  
Induced Current ◽  
Carrier Diffusion ◽  
Nuclear Science ◽  
Electron Beam Induced Current ◽  
P Type

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

Effect of Impurity Ions and Permanent Dipoles for Device Performance of Thin-Film Electroluminescent Diodes

1997 ◽  
Vol 488 ◽  
Author(s):  
Tetsuo Tsutsui ◽  
Masayuki Yahiro ◽  
Dechun Zou
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Reverse Bias ◽  
Short Circuit ◽  
Device Performance ◽  
Constant Voltage ◽  
Device Structure ◽  
Organic Layers ◽  
Impurity Ions ◽  
Ionic Impurities

AbstractDouble-layer EL diodes composed of a spin-coated Polyvinylcarbazole (PVCz) layer and a vacuum-sublimed tris-(8-hydroxyquinoline)aluminum (Alq) layer were prepared. The diodes with the same device structure but with PVCz layer with added ionic impurities were also prepared. The diodes were driven at constant voltage and allowed to stand under short-circuit or reverse bias conditions. Observations of luminance-current density-voltage relations at constant voltage driving were repeated. The decrease of both luminance and current density during constant voltage driving were observed. Both spontaneous and reverse-bias assisted recovery of device performances were observed and these degradation and recovery phenomena were discussed in terms of the movement of ionic impurities in organic layers.

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