A relationship between interface trap density and transconductance in depletion-mode field effect transistors

1995 ◽  
Vol 38 (7) ◽  
pp. 1395-1400 ◽  
Author(s):  
Massood Tabib-Azar
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mode Field

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method

A Relationship between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

1995 ◽  
Vol 410 ◽  
Author(s):  
M. W. Dryfuse ◽  
M. Tabib-Azar
Keyword(s):  
Experimental Data ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Pertinent Literature ◽  
Enhancement Mode ◽  
Mode Field ◽  
Simplifying Assumptions

ABSTRACTAn explicit analytical expression relating the interface trap densities and transconductance is derived for enhancement mode field effect transistors without any simplifying assumptions regarding the energy distribution of traps. Using this relationship, the interface trap densities were calculated from transconductance data and compared to experimental data and that provided in the literature. Our expression provides a simple and convenient method to reliably estimate interface traps densities from the readily available transconductance data provided in the pertinent literature.

Interface Trap Density of Gate-All-Around Silicon Nanowire Field-Effect Transistors With TiN Gate: Extraction and Compact Model

2013 ◽  
Vol 60 (8) ◽  
pp. 2457-2463 ◽  
Author(s):  
Faraz Najam ◽  
Yun Seop Yu ◽  
Keun Hwi Cho ◽  
Kyoung Hwan Yeo ◽  
Dong-Won Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Trap Density ◽  
Compact Model ◽  
Interface Trap Density ◽  
Interface Trap

Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface

2013 ◽  
Vol 740-742 ◽  
pp. 723-726 ◽  
Author(s):  
Narumasa Soejima ◽  
Taishi Kimura ◽  
Tsuyoshi Ishikawa ◽  
Takahide Sugiyama
Keyword(s):  
Nitrous Oxide ◽  
Field Effect ◽  
Inversion Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Field Effect Mobility ◽  
Interfacial Roughness ◽  
Cross Sectional ◽  
Mos Capacitors

We investigated the effects of the post-oxidation annealing (POA) atmosphere on the electrical properties and interfacial roughness of SiO2 deposited on a 4H-SiC (0001) face and SiC. POA in ammonia (NH3) gave MOS capacitors with a lower interface trap density and n-channel MOSFETs with higher field-effect mobility than POA in nitrous oxide (N2O) or nitrogen (N2). In contrast, POA in N2O gave a lower interface trap density than POA in N2, but it gave the lowest field-effect mobility of all the samples. Cross-sectional TEM observations revealed that N2O POA gave a higher interfacial roughness than NH3 POA. We thus considered that N2O POA degraded the inversion-layer mobility due to increased roughness scattering.

scholarly journals Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

2006 ◽  
Vol 527-529 ◽  
pp. 949-954 ◽  
Author(s):  
S. Dhar ◽  
S.R. Wang ◽  
Ayayi Claude Ahyi ◽  
Tamara Isaacs-Smith ◽  
Sokrates T. Pantelides ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Conduction Band ◽  
Field Effect ◽  
Trap Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Maximum Field

Post-oxidation anneals that introduce nitrogen at the SiO2/4H-SiC interface have been most effective in reducing the large interface trap density near the 4H-SiC conduction band-edge for (0001) Si face 4H-SiC. Herein, we report the effect of nitridation on interfaces created on the (11 20) a-face and the (0001) C-face of 4H-SiC. Significant reductions in trap density (from >1013 cm-2 eV-1 to ~ 1012 cm-2 eV-1 at EC-E ~0.1 eV) were observed for these different interfaces, indicating the presence of substantial nitrogen susceptible defects for all crystal faces. Annealing nitridated interfaces in hydrogen results in a further reduction of trap density (from ~1012 cm-2 eV-1 to ~5 x 1011 cm-2 eV-1 at EC-E ~0.1 eV). Using sequential anneals in NO and H2, maximum field effect mobilities of ~55 cm-2 V-1s-1 and ~100 cm-2 V-1s-1 have been obtained for lateral MOSFETs fabricated on the (0001) and (11 20) faces, respectively. These electronic measurements have been correlated to the interface chemical composition.

Carrier-Density Fluctuation Noise and the Interface Trap Density in GaN/AlGaN HFETs

2001 ◽  
Vol 680 ◽  
Author(s):  
Dmitri Kotchetkov ◽  
Alexander A. Balandin
Keyword(s):  
Carrier Density ◽  
Density Fluctuation ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Data

ABSTRACTThe interface trap density NT is extracted from the experimental low-frequency noise data for GaN/AlGaN heterostructure field-effect transistors (HFETs). The trap density is determined based on the carrier-density fluctuation formalism. We show that the value of NT approximately defines the noise response of different GaN/AlGaN HFETs fabricated on the same wafer and it weakly depends on the gate bias. The dependence is due to the non-uniformity of the trap distribution. A model for computer simulation of the low-frequency noise in GaN devices is proposed.

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