A relationship between interface trap density and transconductance in 6HSiC enhancement mode field-effect transistors

1996 ◽  
Vol 39 (9) ◽  
pp. 1331-1335 ◽  
Author(s):  
M.W. Dryfuse ◽  
M. Tabib-Azar
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Enhancement Mode ◽  
Mode Field

A Relationship between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

1995 ◽  
Vol 410 ◽  
Author(s):  
M. W. Dryfuse ◽  
M. Tabib-Azar
Keyword(s):  
Experimental Data ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Pertinent Literature ◽  
Enhancement Mode ◽  
Mode Field ◽  
Simplifying Assumptions

ABSTRACTAn explicit analytical expression relating the interface trap densities and transconductance is derived for enhancement mode field effect transistors without any simplifying assumptions regarding the energy distribution of traps. Using this relationship, the interface trap densities were calculated from transconductance data and compared to experimental data and that provided in the literature. Our expression provides a simple and convenient method to reliably estimate interface traps densities from the readily available transconductance data provided in the pertinent literature.

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method

Interface Trap Density of Gate-All-Around Silicon Nanowire Field-Effect Transistors With TiN Gate: Extraction and Compact Model

2013 ◽  
Vol 60 (8) ◽  
pp. 2457-2463 ◽  
Author(s):  
Faraz Najam ◽  
Yun Seop Yu ◽  
Keun Hwi Cho ◽  
Kyoung Hwan Yeo ◽  
Dong-Won Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Trap Density ◽  
Compact Model ◽  
Interface Trap Density ◽  
Interface Trap

Enhancement-mode field-effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning

2019 ◽  
Vol 52 (22) ◽  
pp. 225102
Author(s):  
Zhuodong Li ◽  
You Meng ◽  
Chao Wang ◽  
Youchao Cui ◽  
Zhao Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Mode Field
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