Extracting the series resistance and effective channel length of short-channel MOSFETs at liquid nitrogen temperature

Solid-State Electronics ◽

10.1016/0038-1101(94)90061-2 ◽

1994 ◽

Vol 37 (12) ◽

pp. 1943-1948 ◽

Author(s):

F.J. García Sánchez ◽

A. Ortiz-Conde ◽

M. García Núñez ◽

R.L. Anderson

Keyword(s):

Liquid Nitrogen ◽

Series Resistance ◽

Liquid Nitrogen Temperature ◽

Channel Length ◽

Short Channel ◽

Effective Channel

Download Full-text

Series resistance and effective gate length extraction on short-channel PMOS devices at liquid nitrogen temperature

Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1994.303478 ◽

2002 ◽

Author(s):

F.J. Garcia Sanchez ◽

A. Ortiz-Conde ◽

M. Garcia Nunez ◽

R.L. Anderson

Keyword(s):

Liquid Nitrogen ◽

Series Resistance ◽

Liquid Nitrogen Temperature ◽

Gate Length ◽

Download Full-text

Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566323 ◽

2002 ◽

Author(s):

Z. Latif ◽

A. Ortiz-Conde ◽

J.J. Liou ◽

F.J.G. Sanchez ◽

W. Wong

Keyword(s):

Doping Level ◽

Extraction Methods ◽

Channel Length ◽

Short Channel ◽

Effective Channel

Download Full-text

A new method to determine effective channel length, series resistance and threshold voltage

Proceedings of International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1996.535635 ◽

2002 ◽

Author(s):

M. Sasaki ◽

H. Ito ◽

T. Horiuchi

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Channel Length ◽

Effective Channel

Download Full-text

A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(00)00054-x ◽

2000 ◽

Vol 44 (7) ◽

pp. 1187-1189 ◽

Author(s):

Guofu Niu ◽

Suraj J Mathew ◽

John D Cressler ◽

Seshu Subbanna

Keyword(s):

Series Resistance ◽

Channel Length ◽

Resistance Ratio ◽

Ratio Method ◽

Channel Resistance ◽

Effective Channel

Download Full-text

Short-channel effects in MOSFET's at liquid-Nitrogen temperature

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1986.22607 ◽

1986 ◽

Vol 33 (7) ◽

pp. 1012-1019 ◽

Author(s):

J.C.S. Woo ◽

J.D. Plummer

Keyword(s):

Liquid Nitrogen ◽

Liquid Nitrogen Temperature ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

Download Full-text

A simple method for effective channel length, series resistance and mobility extraction in deep-submicron MOSFETs

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436665 ◽

2005 ◽

Author(s):

Chun-li Yu ◽

Yue Hao ◽

Lin-an Yang

Keyword(s):

Series Resistance ◽

Channel Length ◽

Deep Submicron ◽

Simple Method ◽

Effective Channel

Download Full-text

Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement

IEEE Transactions on Electron Devices ◽

10.1109/16.974720 ◽

2001 ◽

Vol 48 (12) ◽

pp. 2870-2874 ◽

Author(s):

F.C.J. Kong ◽

Y.T. Yeow ◽

Z.Q. Yao

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Inversion Layer ◽

Channel Length ◽

Small Signal ◽

Channel Conductance ◽

Conductance Measurement ◽

Signal Channel ◽

And Inversion ◽

Effective Channel

Download Full-text

Changes in effective channel length due to hot-electron trapping in short-channel m.o.s.t.s

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1978.0010 ◽

1978 ◽

Vol 2 (2) ◽

pp. 57 ◽

Author(s):

D.J. Coe

Keyword(s):

Channel Length ◽

Electron Trapping ◽

Hot Electron ◽

Short Channel ◽

Effective Channel

Download Full-text

Influence of drain bias voltage on determining the effective channel length and series resistance of drain-engineered MOSFETs below saturation

Solid-State Electronics ◽

10.1016/0038-1101(92)90031-7 ◽

1992 ◽

Vol 35 (5) ◽

pp. 643-649 ◽

Author(s):

S.L. Chen ◽

Jeng Gong

Keyword(s):

Bias Voltage ◽

Series Resistance ◽

Channel Length ◽

Effective Channel

Download Full-text

Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices

Solid-State Electronics ◽

10.1016/j.sse.2006.09.005 ◽

2006 ◽

Vol 50 (11-12) ◽

pp. 1774-1779 ◽

Author(s):

C.S. Ho ◽

Y.C. Lo ◽

Y.H. Chang ◽

Juin J. Liou

Keyword(s):

Series Resistance ◽

Channel Length ◽

Gate Bias ◽

Mos Devices ◽

Effective Channel

Download Full-text