A new DSC for high heating and cooling rates measurements

1988 ◽  
Vol 134 ◽  
pp. 389-394 ◽  
Author(s):  
Ken-Ichi Hirano ◽  
Tamio Ohshima ◽  
Hiroshi Okamoto ◽  
Ryozo Kato ◽  
Akikazu Maesono
Keyword(s):  
Cooling Rates ◽  
Heating And Cooling ◽  
High Heating

EBSD Coupled to SEM In Situ Annealing as a Tool to Identify Recrystallization Mechanisms - Application to Zr and Ta Alloys

2012 ◽  
Vol 715-716 ◽  
pp. 486-491
Author(s):  
Nathalie Bozzolo ◽  
S. Jacomet ◽  
M. Houillon ◽  
B. Gaudout ◽  
Roland E. Logé
Keyword(s):  
High Temperature ◽  
Short Duration ◽  
Microstructure Evolution ◽  
Room Temperature ◽  
Heat Treatments ◽  
Cooling Rates ◽  
Heating And Cooling ◽  
Orientation Mapping ◽  
High Heating

A heating stage as been developed to perform in-situ annealing in a SEM equipped with an EBSD system in order to study recrystallization mechanisms. High temperature treatments could then be performed inside the SEM, up to 1180°C and with high heating-and cooling-rates (~100°C.s-1). Samples were cooled down to room temperature to perform EBSD orientation mapping in between successive short-duration heat-treatments. Microstructure evolution snapshots obtained this way are presented in this paper to show recrystallization in Zircaloy4 and in pure tantalum.

Cooling and Heating Characteristics of Ti-Ni Based Shape Memory Alloy Wire Actuators

2007 ◽  
Vol 124-126 ◽  
pp. 1649-1652 ◽  
Author(s):  
Jung Min Nam ◽  
Jae Hwa Lee ◽  
Yun Jung Lee ◽  
Tae Hyun Nam
Keyword(s):  
Cooling Rate ◽  
Heating Rate ◽  
Vacuum Induction Melting ◽  
Induction Melting ◽  
Heating Rates ◽  
Cooling Rates ◽  
Alloy Wire ◽  
Heating And Cooling ◽  
High Heating ◽  
Better Than

Ti-51Ni(at%) and Ti-40Ni-10Cu(at%) alloy wires with diameters of 0.3mm, 0.5mm and 0.7mm were prepared by drawing the alloy ingots fabricated by vacuum induction melting. Heating rates of the wires were investigated by measuring changes in temperatures of them while applying currents in the range of 1 A and 6 A to them and cooling rates were investigated by measuring changes in temperatures of them after cutting currents. Heating rate increased with increasing the amount of current, while cooling rate was kept constant. Both heating rate and cooling rate increased with decreasing diameter of wire. This suggested that high amount of current and small wire diameter were required for high heating and cooling rate. Comparing Ti-50Ni alloy wires with Ti-40Ni-10Cu alloy wires, heating rates of the latter was faster than that of the former, although cooling rates were almost same. This suggested that Ti-40Ni-10Cu alloy wires is better than Ti-50Ni alloy wires for the applications requiring high actuating rates.

scholarly journals Ultra-High Implant Activation Efficiency In GaN Using Novel High Temperature RTP System

1998 ◽  
Vol 512 ◽  
Author(s):  
X. A. Cao ◽  
C. R. Abernathy ◽  
R. K. Singh ◽  
S. J. Pearton ◽  
M. Fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
High Temperature ◽  
Complete Loss ◽  
Surface Degradation ◽  
Cooling Rates ◽  
Heating And Cooling ◽  
Activation Efficiency ◽  
High Heating

ABSTRACTSi+ implant activation efficiencies above 90%, even at doses of 5×1015 cm−2, have been achieved in GaN by RTP at 1400–1500°C for 10 secs. The annealing system utilizes with MoSi2 heating elements capable of operation up to 1900 °C, producing high heating and cooling rates (up to 100 °C · s−1). Unencapsulated GaN show severe surface pitting at 1300 °C, and complete loss of the film by evaporation at 1400 °C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AIN and 3.4 eV for InN). Encapsulation with either rf-magnetron reactively sputtered or MOMBE-grown AIN thin films provide protection against GaN surface degradation up to 1400 °C, where peak electron concentrations of ∼5×1020 cm-3 can be achieved in Si-implanted GaN. SIMS profiling showed little measurable redistribution of Si, suggesting Dsi ≤ 10-13 cm2 · s−1 at 1400 °C. The implant activation efficiency decreases at higher temperatures, which may result from SiGa to SiN site switching and resultant self-compensation.

Texture Evolution Under Fast Heating and Cooling Rates of Zirconium Alloys Studied In-Situ by Synchrotron X-Ray Diffraction

2020 ◽  
Author(s):  
Chi-Toan Nguyen ◽  
Alistair Garner ◽  
Javier Romero ◽  
Antoine Ambard ◽  
Michael Preuss ◽  
...  
Keyword(s):  
Texture Evolution ◽  
Zirconium Alloys ◽  
X Ray Diffraction ◽  
Fast Heating ◽  
Cooling Rates ◽  
X Ray ◽  
Heating And Cooling

scholarly journals Formation of Hydrides in the Surface Layer of Aluminum in NonEquilibrium Conditions of Electrolyte Plasma

2019 ◽  
Vol 20 (2) ◽  
pp. 181-184
Author(s):  
L. Fedorenkova
Keyword(s):  
Diffusion Layer ◽  
Hydrogen Atoms ◽  
Equilibrium Conditions ◽  
Heating And Cooling ◽  
Polymorphic Modifications ◽  
High Heating ◽  
Aluminum Hydrides ◽  
Micromechanical Characteristics ◽  
Nonequilibrium Conditions ◽  
Non Equilibrium

In this paper, the formation of a diffusion layer on aluminum, which includes aluminum hydrides, in non-equilibrium conditions of electrolyte plasma with high local temperatures, high heating and cooling rates were studied. As a result of the research it was obtained that in the diffusion layer formed complex nanosized inclusions of polymorphic modifications (AlН3)n and AlB3H12. The diffusion in the non-equilibrium conditions of the electrolyte plasma is carried out in hydrogen environment, where the hydrogen atoms have the greatest energy and is one of the main forces that activate the diffusion process and influence the structure, composition and micromechanical characteristics of the diffusion layer.

Sign in / Sign up

Export Citation Format

Share Document