Carrier concentration and mobility in chemically sprayed cadmium sulphide thin films

1979 ◽  
Vol 61 (2) ◽  
pp. 249-257 ◽  
Author(s):  
H.L. Kwok ◽  
W.C. Siu
2014 ◽  
Vol 875-877 ◽  
pp. 228-231
Author(s):  
Shafique Ahmed Arain ◽  
Christopher Wilkins ◽  
Hafiz Badaruddin

Diethyl dithiocarbamate [Cd (S2CN Et2)2] complex is used to deposit the cadmium sulphide thin film at much lower temperature by Aerosol Assisted Chemical Vapour deposition (AACVD) and same precursor is used to synthesize the nanocrystals in Oleylamine at elevated temperature. Thermogravimetric analysis shows that precursor [Cd (S2CN Et2)2] decomposes in the single stage, losing 62% of total weight. Deposition of thin films at 300°C and 400°C showed the growth of CdS clusters which were made of granular crystallites. These results are confirmed by SEM analysis. Thermolysis of the precursor in oleylamine at 240°C gave the nanoparticles most of them are monodispersed spherical shape, few having mono and dipod structures. TEM images confirm the structures. XRD results show the thin films and nanoparticles have hexagonal phase of CdS.


2002 ◽  
Vol 240 (3-4) ◽  
pp. 340-346 ◽  
Author(s):  
A.M. Samoylov ◽  
M.K. Sharov ◽  
S.A. Buchnev ◽  
A.M. Khoviv ◽  
E.A. Dolgopolova

2003 ◽  
Vol 76 (2) ◽  
pp. 183-188 ◽  
Author(s):  
I.J. Ferrer ◽  
J.R. Ares ◽  
C.R. Sánchez

2015 ◽  
Vol 39 (1) ◽  
pp. 25-30 ◽  
Author(s):  
A Hasnat Rubel ◽  
J Podder

Aluminium doped cadmium sulphide thin films were prepared on glass substrate using aqueous solution of cadmium sulphide and thiourea salts by spray pyrolysis deposition (SPD) technique. Its optical properties were analyzed as a function of doping concentration. The direct energy band-gap of Al-doped CdS films was estimated in the range of 2.25 to 2.48 eV. The optical spectra of Cd1-xAlxS ternary system exhibit high absorption near visible region and transmission throughout the near-infrared region (600 - 1200 nm). Thus so obtained hetero-junction films are suitable for fabrication of photo detectors, solar cells and other optoelectronics devices.Journal of Bangladesh Academy of Sciences, Vol. 39, No. 1, 25-30, 2015


Vacuum ◽  
1977 ◽  
Vol 27 (4) ◽  
pp. 277-280 ◽  
Author(s):  
R. Hill ◽  
I.A.S. Edwards
Keyword(s):  

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.


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