A note on the Hall mobility and carrier concentration in pyrite thin films

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.

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Influence of Substrate Temperature on Semiconducting Properties of Thin Films

Zeitschrift für Naturforschung A ◽

10.1515/zna-1968-0302 ◽

1968 ◽

Vol 23 (3) ◽

pp. 348-351 ◽

Cited By ~ 2

Author(s):

V. D. Deokar ◽

A. Goswami

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Carrier Concentration ◽

Hall Coefficient ◽

Hall Mobility ◽

Mean Free Path ◽

Growth Defects ◽

Semiconducting Properties ◽

Influence Of Substrate ◽

Deposited Films

The influence of the substrate temperature during deposition on various semiconducting parameters viz. Hall coefficient (RH), conductivity (σ), Hall mobility (μH), carrier concentration (n) and mean free path (ι0) of vacuum deposited films of Tl2Se and Tl2Te compounds has been studied. Increasing values of RH , σ, μH and ι0 with increasing substrate temperature are explained by a decrease of growth defects of the films with rising substrate temperature.

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Thermal Degradation Behavior of Indium Tin Oxide Thin Films Deposited by Radio Frequency Magnetron Sputtering

Journal of Materials Research ◽

10.1557/jmr.2005.0199 ◽

2005 ◽

Vol 20 (6) ◽

pp. 1574-1579 ◽

Cited By ~ 35

Author(s):

Yong-Nam Kim ◽

Hyun-Gyoo Shin ◽

Jun-Kwang Song ◽

Dae-Hyoung Cho ◽

Hee-Soo Lee ◽

...

Keyword(s):

Thin Films ◽

Thermal Degradation ◽

Magnetron Sputtering ◽

Carrier Concentration ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Hall Mobility ◽

Degradation Behavior ◽

Thermal Degradation Behavior ◽

Ito Films

The thermal degradation behavior of indium tin oxide (ITO) thin films coated on glass substrates using radio frequency (rf) magnetron sputtering was investigated over the temperature range of 100–400 °C in air. The resistivity of ITO films increases abruptly after the thermal degradation temperature of 250 °C is reached, with a slight increase from 200 to 250 °C. The x-ray photoelectron spectrometry intensity ratio of O/(In + Sn) in thermally degraded ITO films is higher than that in normal films. The carrier concentration gradually decreases up to 200 °C, sharply drops between 200 and 250 °C with increasing temperature, and then saturates from 275 °C. The Hall mobility drops suddenly at 275 °C. The diffusion of oxygen into oxygen interstitials and oxygen vacancies and the chemisorption of oxygen into grain boundaries decrease the carrier concentration and the Hall mobility, respectively. The former mainly affects the resistivity of ITO films below 250 °C, and the later above 250 °C.

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Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

Ibn AL- Haitham Journal For Pure and Applied Science ◽

10.30526/31.3.2023 ◽

2018 ◽

Vol 31 (3) ◽

pp. 20

Author(s):

Sarmad M. M. Ali ◽

Alia A.A. Shehab ◽

Samir A. Maki

Keyword(s):

Activation Energy ◽

Electrical Conductivity ◽

Hall Effect ◽

Carrier Concentration ◽

Hall Mobility ◽

Cu Doping ◽

Before And After ◽

Hall Effect Measurements ◽

Evaporation Technique ◽

P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but decreases by increasing Cu concentration.

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Scattering Mechanisms and Suppression of Bipolar Diﬀusion Eﬀect in Bi2Te2.85Se0.15Ix Compounds

Materials ◽

10.3390/ma14061564 ◽

2021 ◽

Vol 14 (6) ◽

pp. 1564

Author(s):

Jin Hee Kim ◽

Song Yi Back ◽

Jae Hyun Yun ◽

Ho Seong Lee ◽

Jong-Soo Rhyee

Keyword(s):

Thermal Conductivity ◽

Carrier Concentration ◽

Hall Mobility ◽

Lattice Distortion ◽

Phonon Scattering ◽

Iodine Concentration ◽

Mean Free Path ◽

Bandgap Energy ◽

Diffusion Effect ◽

Iodine Doping

We investigated the anisotropic thermoelectric properties of the Bi2Te2.85Se0.15Ix (x = 0.0, 0.1, 0.3, 0.5 mol.%) compounds, synthesized by ball-milling and hot-press sintering. The electrical conductivities of the Bi2Te2.85Se0.15Ix were significantly improved by the increase of carrier concentration. The dominant electronic scattering mechanism was changed from the mixed (T ≤ 400 K) and ionization scattering (T ≥ 420 K) for pristine compound (x = 0.0) to the acoustic phonon scattering by the iodine doping. The Hall mobility was also enhanced with the increasing carrier concentration. The enhancement of Hall mobility was caused by the increase of the mean free path of the carrier from 10.8 to 17.7 nm by iodine doping, which was attributed to the reduction of point defects without the meaningful change of bandgap energy. From the electron diffraction patterns, a lattice distortion was observed in the iodine doped compounds. The modulation vector due to lattice distortion increased with increasing iodine concentration, indicating the shorter range lattice distortion in real space for the higher iodine concentration. The bipolar thermal conductivity was suppressed, and the effective masses were increased by iodine doping. It suggests that the iodine doping minimizes the ionization scattering giving rise to the suppression of the bipolar diffusion effect, due to the prohibition of the BiTe1 antisite defect, and induces the lattice distortion which decreases lattice thermal conductivity, resulting in the enhancement of thermoelectric performance.

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Crystal structure, carrier concentration and IR-sensitivity of PbTe thin films doped with Ga by two different methods

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)00912-0 ◽

2002 ◽

Vol 240 (3-4) ◽

pp. 340-346 ◽

Cited By ~ 16

Author(s):

A.M. Samoylov ◽

M.K. Sharov ◽

S.A. Buchnev ◽

A.M. Khoviv ◽

E.A. Dolgopolova

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Carrier Concentration

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RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

10.21203/rs.3.rs-185059/v1 ◽

2021 ◽

Author(s):

Chunhu Zhao ◽

Junfeng Liu ◽

Yixin Guo ◽

Yanlin Pan ◽

Xiaobo Hu ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Carrier Concentration ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Band Model ◽

Deposition Condition ◽

Optical And Electrical Properties ◽

Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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Influence of Sb inclusion on morphologies and carrier concentration properties of CTS thin films grown by sulfurization of Cu-Sn precursors

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac2bd8 ◽

2021 ◽

Author(s):

Nanami Urata ◽

Ayaka Kanai ◽

Mutsumi Sugiyama

Keyword(s):

Thin Films ◽

Carrier Concentration ◽

Concentration Properties

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Growth and Characterizations of Indium-Doped Pentacene Thinfilm Prepared by Thermal Co-Evaporation as a Novel Nanomaterial

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1131.35 ◽

2015 ◽

Vol 1131 ◽

pp. 35-38

Author(s):

Navaphun Kayunkid ◽

Annop Chanhom ◽

Chaloempol Saributr ◽

Adirek Rangkasikorn ◽

Jiti Nukeaw

Keyword(s):

Thin Films ◽

Carrier Concentration ◽

Photoelectron Spectroscopy ◽

High Vacuum ◽

Charge Carrier Mobility ◽

Electrical Measurements ◽

X Ray ◽

Force Microscopy ◽

Vis Spectroscopy ◽

Hybrid Thin Films

This research is related to growth and characterizations of indium-doped pentacene thin films as a novel hybrid material. Doped films were prepared by thermal co-evaporation under high vacuum. The doping concentration was varied from 0% to 50% by controlling the different deposition rate between these two materials while the total thickness was fixed at 100 nm. The hybrid thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Visible spectroscopy to reveal the physical and optical properties. Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage. AFM results identify that doping of indium into pentacene has an effect on surface properties of doped films i.e. the increase of surface grain size. XRD results indicate that doping of metal into pentacene has an effect on preferential orientation of pentacene’s crystalline domains. UV-Vis spectroscopy results show evolution of absorbance at photon energy higher than 2.7 eV corresponding to absorption from oxide of indium formed in the films. Electrical measurements exhibit higher conductivity in doped films resulting from increment of both charge carrier mobility and carrier concentration. Furthermore, chemical interactions taken place inside the doped films were investigated by x-ray photoelectron spectroscopy (XPS) in order to complete the remaining questions i.e. how do indium atoms interact with the neighbor molecules?, what is the origin of the absorption at E > 2.7 eV? Further results and discussions will be presented in the publication.

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