Cd1−xZnxS thin films evaporated by electron bombardment II: Optical properties of the films

1982 ◽  
Vol 87 (2) ◽  
pp. 141-146 ◽  
Author(s):  
C.M. Mbow ◽  
G.W. Cohen-Solal ◽  
D. Laplaze
1983 ◽  
Vol 44 (C10) ◽  
pp. C10-363-C10-366 ◽  
Author(s):  
J. Vlieger ◽  
M. M. Wind

2003 ◽  
Vol 777 ◽  
Author(s):  
J.S. Romero ◽  
A.G. Fitzgerald

AbstractCopper migration is observed in the SEM in amorphous GeSe2/Cu thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. The phenomenon can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%-30% have been obtained. Additionally we have observed the local crystallization of amorphous GeSe2/Cu thin films in the TEM when the samples were subjected to intense electron bombardment. The crystalline product has been identified as Berzelianite (Cu2Se).


2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


2019 ◽  
Vol 7 (1) ◽  
pp. 28
Author(s):  
KOMARAIAH DURGAM ◽  
RADHA EPPA ◽  
REDDY M. V. RAMANA ◽  
KUMAR J. SIVA ◽  
R. SAYANNA ◽  
...  

Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.


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