Effect of applied external magnetic field on the relationship between the arrangement of the substrate and the resistivity of aluminium-doped ZnO thin films prepared by r.f. magnetron sputtering

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

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Effect of buffer thickness on the properties of Al-doped ZnO thin films prepared by DC magnetron sputtering

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-017-6415-7 ◽

2017 ◽

Vol 28 (10) ◽

pp. 7302-7306 ◽

Cited By ~ 4

Author(s):

Ke Zhu ◽

Haibin Wang ◽

Faxin Xiao ◽

Feng Xu

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Zno Thin Films ◽

Dc Magnetron Sputtering ◽

Doped Zno

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RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

10.21203/rs.3.rs-185059/v1 ◽

2021 ◽

Author(s):

Chunhu Zhao ◽

Junfeng Liu ◽

Yixin Guo ◽

Yanlin Pan ◽

Xiaobo Hu ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Carrier Concentration ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Band Model ◽

Deposition Condition ◽

Optical And Electrical Properties ◽

Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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