Transmission electron microscopy studies of microstructural evolution, defect structure, and phase transitions in polycrystalline and epitaxial Ti1−xAlxN and TiN films grown by reactive magnetron sputter deposition

1991 ◽  
Vol 205 (2) ◽  
pp. 153-164 ◽  
Author(s):  
L. Hultman ◽  
G. Håkansson ◽  
U. Wahlström ◽  
J.-E. Sundgren ◽  
I. Petrov ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transitions ◽  
Defect Structure ◽  
Sputter Deposition ◽  
Reactive Magnetron ◽  
Tin Films ◽  
Transmission Electron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

The Microstructure and Nanoindentation Behaviour of TiN/NbN Multilayers

1999 ◽  
Vol 594 ◽  
Author(s):  
J. M. Molina-Aldareguia ◽  
S. J. Lloyd ◽  
Z. H. Barber ◽  
M. G. Blamire ◽  
W. J. Clegg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Sputter Deposition ◽  
Internal Stresses ◽  
Reactive Magnetron ◽  
Growth Morphology ◽  
Transmission Electron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

AbstractTiN/NbN multilayers and TiN monolithic films have been grown by UHV reactive magnetron sputter deposition on MgO single crystals. The hardness has been measured by nanoindentation and the as-deposited and deformed structures studied in cross-section using transmission electron microscopy. It has been found that initially the multilayers grow epitaxially with the substrate. However, once the overall film thickness has reached ∼300 nm, epitaxial growth ceases. No increase in hardness with respect to monolithic films of the multilayer components is observed in these multilayers. Experiments on monolithic films of TiN show that the same loss of epitaxy occurs, leading to a reduction in the hardness of the films, and that this change in growth morphology is triggered by the internal stresses induced within the films during deposition.

Beryllium-Based Multilayer Structures

1995 ◽  
Vol 382 ◽  
Author(s):  
D. G. Stearns ◽  
K. M. Skulina ◽  
M. Wall ◽  
C. S. Alford ◽  
R. M. Bionta ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Normal Incidence ◽  
Sputter Deposition ◽  
Multilayer Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

ABSTRACTMultilayer (ML) structures composed of Mo-Be, Ru-Be and Rh-Be with bilayer periods of - 6 nm have been grown using dc magnetron sputter deposition. The ML microstructure has been characterized using x-ray diffraction and high-resolution transmission electron microscopy, and the normal incidence reflectivity has been measured at soft x-ray wavelengths.

Mg–Ti–spinel formation by interfacial solid-state reaction at the TiN/MgO interface

1989 ◽  
Vol 4 (5) ◽  
pp. 1266-1271 ◽  
Author(s):  
L. Hultman ◽  
J-E. Sundgren ◽  
D. Hesse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Tin Films ◽  
Spinel Formation ◽  
Transmission Electron ◽  
Spinel Composition ◽  
Substrate Temperatures

Mg–Ti–spinel formation has been observed by cross-sectional transmission electron microscopy at the interface of TiN(100) films and MgO(100) substrates for films grown at substrate temperatures higher than 800 °C and for samples post-annealed at 850 °C. The TiN films were deposited by reactive magnetron sputtering onto cleaved (100)-oriented MgO substrates. The spinel formed 5 nm epitaxial layers along the interface with occasional (111) wedges growing into the MgO. The orientational relationships were found to be TiN(100)|spinel(100)|MgO(100) and TiN[001]|spinel[001]|MgO[001]. The spinel composition is suggested to be Mg2TiO4.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

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