Mg–Ti–spinel formation by interfacial solid-state reaction at the TiN/MgO interface

1989 ◽  
Vol 4 (5) ◽  
pp. 1266-1271 ◽  
Author(s):  
L. Hultman ◽  
J-E. Sundgren ◽  
D. Hesse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Tin Films ◽  
Spinel Formation ◽  
Transmission Electron ◽  
Spinel Composition ◽  
Substrate Temperatures

Mg–Ti–spinel formation has been observed by cross-sectional transmission electron microscopy at the interface of TiN(100) films and MgO(100) substrates for films grown at substrate temperatures higher than 800 °C and for samples post-annealed at 850 °C. The TiN films were deposited by reactive magnetron sputtering onto cleaved (100)-oriented MgO substrates. The spinel formed 5 nm epitaxial layers along the interface with occasional (111) wedges growing into the MgO. The orientational relationships were found to be TiN(100)|spinel(100)|MgO(100) and TiN[001]|spinel[001]|MgO[001]. The spinel composition is suggested to be Mg2TiO4.

Photo Modified Growth of GaAs by Chemical Beam Epitaxy

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Jothilingam ◽  
T. Farrell ◽  
T.B. Joyce ◽  
P.J. Goodhew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Electrical Power ◽  
Xenon Lamp ◽  
Chemical Beam Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Laser Reflectometry

AbstractWe report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) provided the irradiation for the photoassisted growth. The growth was monitored in real time by laser reflectometry (LR) using a 670 nm semiconductor laser, and the optically determined growth rate agreed with that obtained from the layer thickness measured by cross sectional transmission electron microscopy. The observed photo-enhancement of the growth rate at low substrate temperatures and inhibition at high substrate temperatures is thermal in origin, consistent with raising the substrate temperature by 10±3°C. Cross sectional transmission electron microscopy showed that the photoassisted layers are essentially free from dislocations

Formation of Microcrystalline Silicon film by RMS Process

1989 ◽  
Vol 164 ◽  
Author(s):  
Cheng Wang ◽  
G.N. Parsons ◽  
E.C. Buehler ◽  
R.J. Nemanich ◽  
G. Lucovsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Film ◽  
Reactive Magnetron ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Microcrystalline Silicon Film ◽  
Deposition Conditions

AbstractWe have deposited microcrystalline, gc-Si, silicon films by using RF reactive magnetron sputtering (RMS) at high substrate temperatures, Ts > 500°C, and at a relatively low partial pressure of hydrogen, PH = 0.40 mTorr, and at low Ts ∼200- 300°C, but with a higher PH > 2 mTorr. We have detected μc-crystallinity by Raman scattering and transmission electron microscopy. We discuss differences in the growth mechanisms for formation of μc-Si under these two deposition conditions.

Solid-state reaction of Ru powder in molten AlxBi1−x

1990 ◽  
Vol 5 (4) ◽  
pp. 746-753 ◽  
Author(s):  
R. W. Johnson ◽  
C. M. Garland
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Alloy System ◽  
Reaction Cross ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Metal Solvent

We describe a low-temperature solid-state interdiffusion technique that allows reaction between spatially separated reacting species and its application in the Al–Ru alloy system. This technique uses a liquid-metal solvent (Bi) as a medium for the transfer of Al to the surface of Ru powder where reaction occurs with the formation of nanocrystalline AlxRu1−x product phases. X-ray diffraction measurements are used to follow the time and temperature dependence of the reaction. Cross-sectional transmission electron microscopy allows direct imaging of the growth and morphology of the AlxRu1−x product phases.

Amorphization phenomenon in Ni/amorphous Si multilayers

1994 ◽  
Vol 9 (2) ◽  
pp. 401-405 ◽  
Author(s):  
W.H. Wang ◽  
W.K. Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Amorphous Structure ◽  
Cross Sectional ◽  
Modulation Period ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission ◽  
State Amorphization

Interfacial reactions of Ni/amorphous Si(a-Si) multilayers are studied by means of transmission electron microscopy (TEM) and cross-sectional transmission electron microscopy (XTEM). Transformation from a crystalline to an amorphous structure has been observed in as-deposited Ni/a-Si multilayers with small modulation periods. This phenomenon is suggested to be due to interdiffusion-induced solid state amorphization which is facilitated by the high density of interface in the shorter modulation period multilayers. A thermodynamic and kinetic explanation is given for this phenomenon.

Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
T. Sawada ◽  
W. X. Chen ◽  
E. D. Marshall ◽  
K. L. Kavanagh ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Shallow Junctions

ABSTRACTAlloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

Oxygen Ion Implantation into Germanium

1987 ◽  
Vol 107 ◽  
Author(s):  
T.P. Sjoreen ◽  
N.M. Ravindra ◽  
M.K. El-Ghor ◽  
D. Fathy
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dense Network ◽  
Cross Sectional ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Spin Resonance ◽  
Buried Layer ◽  
Substrate Temperatures ◽  
Oxygen Ion Implantation

AbstractSingle crystal (111) and (100) Ge wafers were implanted with 16O (180 keV, 2.0 x 1018/cm2, 14–28 ¼A/cm2 ) at substrate temperatures of 250, 330, and 500°C. Implanted samples were annealed at 350, 450, 550, and 650°C for 30–90 minutes in an Ar ambient. Rutherford backscattering channeling analysis and cross-sectional transmission electron microscopy indicate that an amorphous buried layer is formed by implantation and that the overlayer contains a dense network of precipitates. Electron spin resonance measurements indicate that the layer does not contain GeO2, but rather oxygen deficient GeO2. Annealing of samples up to 550°C showed no change in the morphology, however, after annealing at 650°C the buried layer was gone and all that remained was a damaged Ge substrate with little or no oxygen. Further annealing for 60 min left nearly virgin Ge.

3C–SiC/Si/3C–SiC epitaxial trilayer films deposited on Si(111) substrates by reactive magnetron sputtering

1995 ◽  
Vol 10 (6) ◽  
pp. 1349-1351 ◽  
Author(s):  
Q. Wahab ◽  
L. Hultman ◽  
I.P. Ivanov ◽  
M. Willander ◽  
J-E. Sundgren
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Stacking Faults ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Epitaxial Structure ◽  
Transmission Electron

A trilayer epitaxial structure of 3C-SiC/Si/3C-SiC was grown on Si(111) substrate by reactive magnetron sputtering. The layered structure consisted of a 300 nm thick Si layer sandwiched between two 250 nm thick 3C-SiC layers. Cross-sectional transmission electron microscopy (XTEM) showed that all layers were epitaxial to each other. The 3C-SiC layers contained stacking faults and double positioning domains with a high density in the second SiC layer. The Si layer showed the lowest density of planar faults, but developed growth facets. Observation was made of stacking faults propagating from 3C-SiC to Si layer as well as stacking faults originating at the termination of 3C-SiC double positioning boundaries into Si. The termination of Si stacking faults during growth of SiC is also reported.

In-Situ Annealing Transmission Electron Microscopy Study of Pd/Ge/Pd/GaAs Interfacial Reactions

1999 ◽  
Vol 589 ◽  
Author(s):  
F. Radulescu ◽  
J.M. Mccarthy ◽  
E. A. Stach
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Epitaxial Growth ◽  
Ohmic Contact ◽  
Ion Beam ◽  
Solid State Reactions ◽  
Cross Sectional ◽  
Transmission Electron

AbstractIn-situ TEM annealing experiments on the Pd (20 nm) / a-Ge (150 nm) / Pd (50 nm) GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. As-deposited cross-sectional samples of equal thickness were prepared using a focused ion beam (FIB) method and then subjected to in-situ annealing at temperatures between 130-400 °C. Excluding Pd-GaAs interactions, four sequential solid state reactions were observed during annealing of the Pd:Ge thin films. First, interdiffusion of the Pd and Ge layers occurred, followed by formation of the hexagonal Pd2Ge phase. This hexagonal phase then transformed into orthorhombic PdGe, followed by solid state epitaxial growth of Ge at the contact / GaAs interface. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape observations. These data agreed with a previous study that measured the activation energies through a differential scanning calorimetry (DSC) method. We established that the Ge transport to the GaAs interface was dependent upon the grain size of the PdGe phase. The nucleation and growth of this phase was demonstrated to have a significant effect on the solid phase epitaxial growth of Ge on GaAs. These findings allowed us to engineer an improved two step annealing procedure that would control the shape and size of the PdGe grains. Based on these results, we have established the suitability of combining FIB sample preparation with in-situ cross-sectional transmission electron microscopy (TEM) annealing for studying thin film solid-state reactions.

Two-View Small-Angle Wedge Sample Preparation By Hand Tools For Transmission Electron Microscopy Of Semiconductors And Related Materials

1997 ◽  
Vol 480 ◽  
Author(s):  
Suli Suder ◽  
C. A. Faunce ◽  
S. E. Donnelly
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Small Angle ◽  
Hand Tools ◽  
Cross Sectional ◽  
Plan View ◽  
Tin Films ◽  
Transmission Electron ◽  
Ion Implanted

AbstractVarious small-angle wedge two-view samples have been prepared by a small-angle cleavage technique using hand tools and examined by transmission electron microscopy. Cleaved wedges from the same material are mounted both as plan-view and cross-sectional samples on the same TEM specimen grid allowing convenient examination in both views. Samples of Si3N4, Zr, Co and TiN/CN/TiN films deposited on Si, and He ion implanted Si prepared by this technique are shown to be suitable for analysis in the TEM.

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