First-order Raman scattering in homoepitaxial chemical vapor deposited diamond at elevated temperatures

1992 ◽  
Vol 212 (1-2) ◽  
pp. 206-215 ◽  
Author(s):  
H. Herchen ◽  
M.A. Cappelli ◽  
M.I. Landstrass ◽  
M.A. Plano ◽  
M.D. Moyer
Keyword(s):  
Raman Scattering ◽  
Elevated Temperatures ◽  
Chemical Vapor ◽  
First Order ◽  
Chemical Vapor Deposited

Compositionally graded mullite-based chemical vapor deposited coatings

2009 ◽  
Vol 24 (2) ◽  
pp. 470-474 ◽  
Author(s):  
Tushar Kulkarni ◽  
H.Z. Wang ◽  
S.N. Basu ◽  
V.K. Sarin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Elevated Temperatures ◽  
Chemical Vapor ◽  
The Other ◽  
System A ◽  
Chemical Vapor Deposited ◽  
Coating Composition ◽  
Graded Coating ◽  
Outer Coating

Dense, crystalline mullite (3Al2O3ċ2SiO2) coatings have been deposited by chemical vapor deposition on Si-based substrates using the AlCl3–SiCl4–CO2–H2 system. A graded coating composition has been achieved in the coatings, with the Al/Si ratio being stoichiometric (∼3) at the coating/substrate interface, and increasing monotonically toward the outer coating surface. The highest reported Al-rich mullite has been deposited in the process. At high Al/Si ratios, the mullite structure breaks down and an aluminosilicate phase similar to the metastable δ* Al2O3 is nucleated. Experimental evidence is presented in this study that this phase has some Si-incorporation in it and has been called δ*(Si)Al2O3. Like the other known aluminosilicates, δ*(Si)Al2O3 converts to mullite on heating at elevated temperatures.

Infrared Raman scattering as a sensitive probe for the thermal conductivity of chemical vapor deposited diamond films

1996 ◽  
Vol 68 (11) ◽  
pp. 1482-1484 ◽  
Author(s):  
E. Wörner ◽  
J. Wagner ◽  
W. Müller‐Sebert ◽  
C. Wild ◽  
P. Koidl
Keyword(s):  
Thermal Conductivity ◽  
Raman Scattering ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Raman scattering studies of chemical‐vapor‐deposited cubic SiC films of (100) Si

1988 ◽  
Vol 64 (6) ◽  
pp. 3176-3186 ◽  
Author(s):  
Z. C. Feng ◽  
A. J. Mascarenhas ◽  
W. J. Choyke ◽  
J. A. Powell
Keyword(s):  
Raman Scattering ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Sic Films

Nanoindentation of chemical-vapor deposited Al 2 O 3 hard coatings at elevated temperatures

2015 ◽  
Vol 578 ◽  
pp. 20-24 ◽  
Author(s):  
Marisa Rebelo de Figueiredo ◽  
Manuel D. Abad ◽  
Adrian J. Harris ◽  
Christoph Czettl ◽  
Christian Mitterer ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Chemical Vapor ◽  
Hard Coatings ◽  
Chemical Vapor Deposited

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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