Effect of the deposition temperature on the iridum film microstructure produced by metal-organic chemical vapour deposition: sample characterization using x-ray techniques

1993 ◽  
Vol 227 (2) ◽  
pp. 144-152 ◽  
Author(s):  
N.V. Gelfond ◽  
F.V. Tuzikov ◽  
I.K. Igumenov
Keyword(s):  
Chemical Vapour Deposition ◽  
Deposition Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray ◽  
Sample Characterization ◽  
Metal Organic ◽  
Film Microstructure ◽  
Deposition Sample

The Effects of Deposition temperature on the Growth of Copper films produced by low pressure metal-organic chemical vapour deposition

1995 ◽  
Vol 391 ◽  
Author(s):  
S.S. Yoon ◽  
S.W. Kang ◽  
S.S. Chun
Keyword(s):  
Chemical Vapour Deposition ◽  
Deposition Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Organic Chemical ◽  
Copper Films ◽  
Cross Sectional ◽  
Initial Stage ◽  
Metal Organic

AbstractCopper was deposited onto TiN by low pressure metal-organic chemical vapour deposition, using hfacCu(I)TMVS and argon carrier gas. The effects of the deposition temperature on the growth of copper films were investigated by observing the surface morphology and the cross sectional morphology of copper films. At the initial stage of growth, copper films tended to have the island-like growth mode, irrespective of the deposition temperatures. It was also observed that the aspect ratio(=height to width) of the islands gradually increased as the deposition temperature increased. The poorer movability of the copper atoms at the higher deposition temperature was evaluated on the basis of hindering effect by the following copper deposits.

Metalorganic Chemical Vapour Deposition of CuInSe2 From Copper and Indium Diselenocarbamates for Solar Cell Devices

1997 ◽  
Vol 485 ◽  
Author(s):  
John McAleese ◽  
Paul O'Brien ◽  
David J. Otway
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CulnSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 – 450 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

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