X-ray analysis of epitaxial thin film grown on an (001) substrate by metal - organic chemical vapour deposition

1996 ◽  
Vol 8 (49) ◽  
pp. 10185-10194 ◽  
Author(s):  
Li Sun ◽  
Yan-Feng Chen ◽  
Peng Li ◽  
Tao Yu ◽  
Jian-Xie Chen ◽  
...  
2015 ◽  
Vol 33 (4) ◽  
pp. 725-731 ◽  
Author(s):  
K.O. Oyedotun ◽  
E. Ajenifuja ◽  
B. Olofinjana ◽  
B.A. Taleatu ◽  
E. Omotoso ◽  
...  

AbstractLithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD) technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS), UV-Vis spectrophotometry, X-ray diffraction (XRD) spectroscopy, atomic force microscopy (AFM) and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2) and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T) in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.


1999 ◽  
Vol 606 ◽  
Author(s):  
Michael Kemmler ◽  
Michael Lazell ◽  
Paul O'brien ◽  
David J. Otwaya

AbstractThin film(s) of chalcopyrite CuInE2(where E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors [In(E2CNMenHexyl)3] and [Cu(E2CNMenHexyl)2]. Similarly, thin films of ME (where M = Zn, Cd; E = S, Se) have been deposited from precursors of general formula [M(E2CNMenHex)2]x. Films were grown on glass between 400 - 500 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.


1997 ◽  
Vol 485 ◽  
Author(s):  
John McAleese ◽  
Paul O'Brien ◽  
David J. Otway

AbstractThin film(s) of chalcopyrite CulnSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 – 450 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.


2014 ◽  
Vol 558 ◽  
pp. 374-377 ◽  
Author(s):  
G. Kartopu ◽  
V. Barrioz ◽  
S.J.C. Irvine ◽  
A.J. Clayton ◽  
S. Monir ◽  
...  

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