A field effect transistor based on Langmuir-Blodgett films of an Ni(dmit)2 charge transfer complex

1994 ◽  
Vol 244 (1-2) ◽  
pp. 932-935 ◽  
Author(s):  
C. Pearson ◽  
A.J. Moore ◽  
J.E. Gibson ◽  
M.R. Bryce ◽  
M.C. Petty
2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2727-2729 ◽  
Author(s):  
Hirotaka Sakuma ◽  
Masaaki Iizuka ◽  
Masakazu Nakamura ◽  
Kazuhiro Kudo ◽  
Kuniaki Tanaka

1993 ◽  
Vol 2 (4) ◽  
pp. 309-314 ◽  
Author(s):  
J. P. Bourgoin ◽  
M. Vandevyver ◽  
A. Barraud ◽  
G. Tremblay ◽  
P. Hesto

Langmuir ◽  
2005 ◽  
Vol 21 (12) ◽  
pp. 5343-5348 ◽  
Author(s):  
Jun Matsui ◽  
Shinsuke Yoshida ◽  
Takeshi Mikayama ◽  
Atsushi Aoki ◽  
Tokuji Miyashita

2007 ◽  
Vol 91 (24) ◽  
pp. 243515 ◽  
Author(s):  
Naoko Kawasaki ◽  
Takayuki Nagano ◽  
Yoshihiro Kubozono ◽  
Yuuki Sako ◽  
Yu Morimoto ◽  
...  

2019 ◽  
Vol 7 (33) ◽  
pp. 10257-10263 ◽  
Author(s):  
Tommaso Salzillo ◽  
Antonio Campos ◽  
Marta Mas-Torrent

Solution-deposited thin films of the charge transfer complex DBTTF–TCNQ blended with polystyrene lead to ambipolar field-effect transistor devices.


1998 ◽  
Vol 327-329 ◽  
pp. 391-394
Author(s):  
Keiichi Ikegami ◽  
Shin-ichi Kuroda ◽  
Tomoyuki Akutagawa ◽  
Taro Konuma ◽  
Takayoshi Nakamura ◽  
...  

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