Floating Back-Gate Field Effect Transistor Fabricated Using a Single Nanowire of Charge Transfer Complex as a Channel

This paper presents a new field-effect sensor called open-gate junction gate field-effect transistor (OG-JFET) for biosensing applications. The OG-JFET consists of a p-type channel on top of an n-type layer in which the p-type serves as the sensing conductive layer between two ohmic contacted sources and drain electrodes. The structure is novel as it is based on a junction field-effect transistor with a subtle difference in that the top gate (n-type contact) has been removed to open the space for introducing the biomaterial and solution. The channel can be controlled through a back gate, enabling the sensor’s operation without a bulky electrode inside the solution. In this research, in order to demonstrate the sensor’s functionality for chemical and biosensing, we tested OG-JFET with varying pH solutions, cell adhesion (human oral neutrophils), human exhalation, and DNA molecules. Moreover, the sensor was simulated with COMSOL Multiphysics to gain insight into the sensor operation and its ion-sensitive capability. The complete simulation procedures and the physics of pH modeling is presented here, being numerically solved in COMSOL Multiphysics software. The outcome of the current study puts forward OG-JFET as a new platform for biosensing applications.

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Dopingless Tunnel Field-Effect Transistor With Oversized Back Gate: Proposal and Investigation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2861943 ◽

2018 ◽

Vol 65 (10) ◽

pp. 4701-4708 ◽

Cited By ~ 9

Author(s):

Mohd Adil Raushan ◽

Naushad Alam ◽

Mohammad Jawaid siddiqui

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Back Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Electrochemical Growth of InSb Nanowires and Report of a Single Nanowire Field Effect Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2008.203 ◽

2008 ◽

Vol 3 (2) ◽

pp. 199-202 ◽

Cited By ~ 14

Author(s):

M. Ibrahim Khan ◽

Miroslav Penchev ◽

Xiaoye Jing ◽

Xu Wang ◽

Krassimir N. Bozhilov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Single Nanowire ◽

Electrochemical Growth ◽

Effect Transistor ◽

Insb Nanowires

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Gate-Tunable Surface Processes on a Single-Nanowire Field-Effect Transistor

Advanced Materials ◽

10.1002/adma.201004203 ◽

2011 ◽

Vol 23 (20) ◽

pp. 2306-2312 ◽

Cited By ~ 29

Author(s):

Syed Mubeen ◽

Martin Moskovits

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Surface Processes ◽

Single Nanowire ◽

Effect Transistor

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Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2036 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2036-2040 ◽

Cited By ~ 15

Author(s):

Seiji Horiguchi ◽

Akira Fujiwara ◽

Hiroshi Inokawa ◽

Yasuo Takahashi

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Voltage Dependence ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Back Gate ◽

Effect Transistor

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Enhancing photoresponse by synergy of electric double layer gate and illumination in single CuTCNQ NW field effect transistors

Electronics Science Technology and Application ◽

10.18686/esta.v5i1.66 ◽

2018 ◽

Vol 5 (1) ◽

Author(s):

Rabaya Basori

Keyword(s):

Double Layer ◽

Electric Double Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Charge Transfer Complex ◽

Field Effect Transistors ◽

Gate Bias ◽

Electron Hole ◽

Metal Organic ◽

Effect Transistor

We report that photoresponse of a single metal-organic charge transfer complex Cu:TCNQ nanowire (NW) can be enhanced simultaneously by illumination as well as applying a gate bias in an Electric Double Layer Field Effect Transistor (EDL-FET) configuration fabricated on Cu:TCNQ as a channel.It is observed that applying a bias using an EDL gate to a n-channel Cu:TCNQ single NW FET, one can enhance the photoresponse of the Cu:TCNQ substantially over that which arise from the photoconductive response alone. Electron-hole pairs that generate in the NW under illuminated of wavelength 400nm gives rise photo current. Also, electric double layer induce negative charges in the NW channel which effectively increases the carrier concentration, contributing to better response in conduction. The effect reported here has a generic nature that gives rise to a class of gated photodetectors of different photoresponsive materials.

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