scholarly journals Solution-processed thin films of a charge transfer complex for ambipolar field-effect transistors

2019 ◽  
Vol 7 (33) ◽  
pp. 10257-10263 ◽  
Author(s):  
Tommaso Salzillo ◽  
Antonio Campos ◽  
Marta Mas-Torrent
Keyword(s):  
Thin Films ◽  
Charge Transfer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Transfer Complex ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Effect Transistor ◽  
A Charge

Solution-deposited thin films of the charge transfer complex DBTTF–TCNQ blended with polystyrene lead to ambipolar field-effect transistor devices.

scholarly journals Enhancing photoresponse by synergy of electric double layer gate and illumination in single CuTCNQ NW field effect transistors

2018 ◽  
Vol 5 (1) ◽  
Author(s):  
Rabaya Basori
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Transfer Complex ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Electron Hole ◽  
Metal Organic ◽  
Effect Transistor

<p class="BodyText1"><span lang="EN-IN">We report that photoresponse of </span><span lang="EN-US">a single metal-organic charge transfer complex Cu:TCNQ nanowire (NW)</span><span lang="EN-IN"> can be enhanced simultaneously by illumination as well as applying a gate bias in an Electric Double Layer Field Effect Transistor (EDL-FET) configuration fabricated on </span><span lang="EN-US">Cu:TCNQ </span><span lang="EN-IN">as a channel.</span><span lang="EN-IN">It is observed that applying a bias using an EDL gate to a n-channel Cu:TCNQ single NW FET, one can enhance the photoresponse of the Cu:TCNQ substantially over that which arise from the photoconductive response alone. </span><span lang="EN-US">Electron-hole pairs that generate in the NW under illuminated of wavelength 400nm gives rise photo current. Also, electric double layer induce negative charges in the NW channel which effectively increases the carrier concentration, contributing to better response in conduction. </span><span lang="EN-IN">The effect reported here has a generic nature that gives rise to a class of gated photodetectors of different photoresponsive materials.</span></p>

Fabrication of Field-Effect Transistor Using Charge-Transfer-Complex Langmuir-Blodgett Films

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2727-2729 ◽  
Author(s):  
Hirotaka Sakuma ◽  
Masaaki Iizuka ◽  
Masakazu Nakamura ◽  
Kazuhiro Kudo ◽  
Kuniaki Tanaka
Keyword(s):  
Charge Transfer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Transfer Complex ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films ◽  
Effect Transistor

scholarly journals Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

2012 ◽  
Vol 100 (25) ◽  
pp. 253507 ◽  
Author(s):  
Pradipta K. Nayak ◽  
J. A. Caraveo-Frescas ◽  
Unnat. S. Bhansali ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Oxide Thin Films ◽  
Solution Processed ◽  
Effect Transistor

A charge transfer single crystal field effect transistor operating at low voltages

2013 ◽  
Vol 49 (52) ◽  
pp. 5847 ◽  
Author(s):  
Abhay A. Sagade ◽  
K. Venkata Rao ◽  
Subi J. George ◽  
Ayan Datta ◽  
Giridhar U. Kulkarni
Keyword(s):  
Charge Transfer ◽  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Crystal Field Effect ◽  
Effect Transistor ◽  
A Charge

scholarly journals A sub-150-nanometre-thick and ultraconformable solution-processed all-organic transistor

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fabrizio Antonio Viola ◽  
Jonathan Barsotti ◽  
Filippo Melloni ◽  
Guglielmo Lanzani ◽  
Yun-Hi Kim ◽  
...  
Keyword(s):  
Human Skin ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Total Thickness ◽  
Organic Field Effect Transistor ◽  
Solution Processed ◽  
Organic Transistor ◽  
Effect Transistor ◽  
New Applications

AbstractRecent advancements in the field of electronics have paved the way to the development of new applications, such as tattoo electronics, where the employment of ultraconformable devices is required, typically achievable with a significant reduction in their total thickness. Organic materials can be considered enablers, owing to the possibility of depositing films with thicknesses at the nanometric scale, even from solution. However, available processes do not allow obtaining devices with thicknesses below hundreds of nanometres, thus setting a limit. Here, we show an all-organic field effect transistor that is less than 150 nm thick and that is fabricated through a fully solution-based approach. Such unprecedented thickness permits the device to conformally adhere onto nonplanar surfaces, such as human skin, and to be bent to a radius lower than 1 μm, thereby overcoming another limitation for field-effect transistors and representing a fundamental advancement in the field of ultrathin and tattoo electronics.

scholarly journals Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator

2020 ◽  
Vol 8 (16) ◽  
pp. 5535-5540 ◽  
Author(s):  
Saleem Anwar ◽  
Beomjin Jeong ◽  
Mohammad Mahdi Abolhasani ◽  
Wojciech Zajaczkowski ◽  
Morteza Hassanpour Amiri ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Effect Transistor

Ultra-smooth thin-films of nylons, one of the most successful commercialized polymers, have been realized for the application in ferroelectric field effect transistors.

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