Doping of rf plasma deposited diamond-like carbon films

1995 ◽  
Vol 270 (1-2) ◽  
pp. 194-199 ◽  
Author(s):  
S.R.P. Silva ◽  
G.A.J. Amaratunga
2014 ◽  
Vol 54 (1S) ◽  
pp. 01AD04 ◽  
Author(s):  
Yuki Yasuoka ◽  
Toru Harigai ◽  
Jun-Seok Oh ◽  
Hiroshi Furuta ◽  
Akimitsu Hatta ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Yuqi Xue ◽  
Zixin Wang ◽  
Jun Wang ◽  
Changji Hu ◽  
Fangyan Xie ◽  
...  

Modification of hydrogen-free diamond-like carbon (DLC) is presented, with acrylic acid (AA) vapor carried into a vacuum chamber by argon and with the in situ assistance of low-power radio frequency (RF) plasma at a temperature below 100°C. Measured by atomic force microscopy (AFM) technique, the roughness (Ra) of the DLC was 1.063±0.040 nm. XPS and FT-IR spectra analysis showed that carboxyl groups were immobilized on the surface of the DLC films, with about 40% of carboxyl group area coverage. It was found that the RF plasma and reaction time are important in enhancing the modification rate and efficiency.


Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 1360-1363 ◽  
Author(s):  
X.-D. Pan ◽  
E.A. Maydell ◽  
R.H. Milne ◽  
D.J. Fabian

2007 ◽  
Vol 539-543 ◽  
pp. 3574-3579 ◽  
Author(s):  
S.S. Tzeng ◽  
Wei Min Wu ◽  
J.S. Hsu

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using methane as carbon source. Effect of substrate on the growth of DLC films was investigated by using four different substrate materials, silicon wafer (100), glass, flat-polished and mirror-polished alumina. The carbon films were deposited at four different self-bias voltages (-157 V, -403 V, -500 V and -590 V) by changing the plasma power under fixed flow rate and working pressure. Raman analyses indicated that DLC films were deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, and polymer-like carbon films were obtained at -157 V. For the alumina substrates, different Raman results were observed for flat-polished and mirror-polished alumina substrates. The hardness of DLC films, deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, was within 16~20 GPa using nanoindentation technique.


2002 ◽  
Vol 406 (1-2) ◽  
pp. 275-281 ◽  
Author(s):  
G. Fedosenko ◽  
D. Korzec ◽  
J. Engemann ◽  
D. Lyebyedyev ◽  
H.-C. Scheer

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