Simple liquid helium pressure transducer

Vacuum ◽  
1968 ◽  
Vol 18 (10) ◽  
pp. 576
1968 ◽  
Vol 39 (5) ◽  
pp. 719-722 ◽  
Author(s):  
M. Chester ◽  
S. C. Choudhery ◽  
B. K. Jones ◽  
D. Williams

1969 ◽  
Vol 2 (8) ◽  
pp. 729-730 ◽  
Author(s):  
A C Rose-Innes ◽  
J J Rowland

Author(s):  
R. E. Worsham ◽  
J. E. Mann ◽  
E. G. Richardson

This superconducting microscope, Figure 1, was first operated in May, 1970. The column, which started life as a Siemens Elmiskop I, was modified by removing the objective and intermediate lenses, the specimen chamber, and the complete vacuum system. The large cryostat contains the objective lens and stage. They are attached to the bottom of the 7-liter helium vessel and are surrounded by two vapor-cooled radiation shields.In the initial operational period 5-mm and 2-mm focal length objective lens pole pieces were used giving magnification up to 45000X. Without a stigmator and precision ground pole pieces, a resolution of about 50-100Å was achieved. The boil-off rate of the liquid helium was reduced to 0.2-0.3ℓ/hour after elimination of thermal oscillations in the cryostat. The calculated boil-off was 0.2ℓ/hour. No effect caused by mechanical or electrical instability was found. Both 4.2°K and 1.7-1.9°K operation were routine. Flux pump excitation and control of the lens were quite smooth, simple, and, apparently highly stable. Alignment of the objective lens proved quite awkward, however, with the long-thin epoxy glass posts used for supporting the lens.


Author(s):  
M.K. Lamvik ◽  
D.A. Kopf ◽  
S.D. Davilla ◽  
J.D. Robertson

Last year we reported1 that there is a striking reduction in the rate of mass loss when a specimen is observed at liquid helium temperature. It is important to determine whether liquid helium temperature is significantly better than liquid nitrogen temperature. This requires a good understanding of mass loss effects in cold stages around 100K.


Author(s):  
N.A. Bert ◽  
A.O. Kosogov

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.


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