Surface diffusion activation energy determination using ion beam microtexturing

Vacuum ◽  
1983 ◽  
Vol 33 (7) ◽  
pp. 425
1995 ◽  
Vol 402 ◽  
Author(s):  
S. Shingubara ◽  
S. Takata ◽  
E. Takahashi ◽  
S. Konagata ◽  
H. Sakaue ◽  
...  

AbstractDetailed analysis of Ti and/or TiSi2 islands growth have been made by UHV-STM observations after Ti deposition and subsequent annealing. It is shown that islands growth mode changes drastically at about 500 U for both cases on Si(111)-7×7 and on H-terminated Si(lll)-l×l. In the temperature regime higher than 500 °C, activation energies of islands growth are 1.12eV and 0.56eV for Si(M11)-7×7 and H-terminated Si(111) respectively. It is speculated that residual H-atoms combined with Si dangling bonds lowered surface diffusion activation energy.


2018 ◽  
Vol 4 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Nikolay A. Kalanda

Polycrystalline Sr2FeMoO6-δ specimens have been obtained by solid state synthesis from partially reduced SrFeO2,52 and SrMoO4 precursors. It has been shown that during oxygen desorption from the Sr2FeMoO6-δ compound in polythermal mode in a 5%H2/Ar gas flow at different heating rates, the oxygen index 6-δ depends on the heating rate and does not achieve saturation at T = 1420 K. Oxygen diffusion activation energy calculation using the Merzhanov method has shown that at an early stage of oxygen desorption from the Sr2FeMoO6-δ compound the oxygen diffusion activation energy is the lowest Еа = 76.7 kJ/mole at δ = 0.005. With an increase in the concentration of oxygen vacancies, the oxygen diffusion activation energy grows to Еа = 156.3 kJ/mole at δ = 0.06. It has been found that the dδ/dt = f (Т) and dδ/dt = f (δ) functions have a typical break which allows one to divide oxygen desorption in two process stages. It is hypothesized that an increase in the concentration of oxygen vacancies Vo•• leads to their mutual interaction followed by ordering in the Fe/Mo-01 crystallographic planes with the formation of various types of associations.


1998 ◽  
Vol 510 ◽  
Author(s):  
J. Chevallier ◽  
B. Theys ◽  
C. Grattepain ◽  
A. Deneuville ◽  
E. Gheeraert

AbstractDeuterium diffusion has been investigated in boron doped diamond as a function of the diffusion temperature and the boron concentration. The results show that, up to 480°C, hydrogen diffusion is limited by the boron concentration with a diffusion activation energy of 0.35 eV for [B] = 5×1019 cm−3. This first experimental evidence of deuterium-boron interactions in diamond is interpreted as the result of hydrogen ionization and diffusion of fairly mobile protons which form pairs with negatively charged boron acceptors


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