Viscous resistance of thromboid (thrombus-like) surface layers in systems of plasma proteins including fibrinogen

1972 ◽  
Vol 1 (1) ◽  
pp. 1-17 ◽  
Author(s):  
A.L. Copley ◽  
R.G. King
1976 ◽  
Vol 24 (10) ◽  
pp. 1076-1084 ◽  
Author(s):  
J Bignon ◽  
F Jaubert ◽  
M C Jaurand

Ultrastructural immunocytochemistry of plasma proteins and cytochemistry of polysaccharides with ruthenium red and concanavalin A were combined with different types of fixation with or without prior vascular or airway washing, to study the surface of capillary endothelial and alveolar epithelial cells of the blood-air barrier in the rat lung. The endothelial and epithelial cell surface layers were found to have two components: a moveable part belonging to the cellular microenvironement made of plasma proteins and a deeper glucidic or anionic fixed part bound to the plasma membranes (cell coat).


The conditions governing the rate of flow of ionic and non-ionic liquids in narrow channels are examined, and it is demonstrated that in certain circumstances the electrical resistance to shear in ionic liquids, due to the effect of an electrical potential gradient on the ions of the surface layers, may assume considerable importance relative to the mechanical (viscous) resistance to shear. The results of this analysis are of important application in various fields, and offer an explanation of anomalous results obtained by numerous experimental workers.


1984 ◽  
Vol 75 ◽  
pp. 407-422
Author(s):  
William K. Hartmann

ABSTRACTThe nature of collisions within ring systems is reviewed with emphasis on Saturn's rings. The particles may have coherent icy cores and less coherent granular or frosty surface layers, consistent with thermal eclipse observations. Present-day collisions of such ring particles do not cause catastrophic fragmentation of the particles, although some minor surface erosion and reaccretion is possible. Evolution by collisional fragmentation is thus not as important as in the asteroid belt.


Author(s):  
M. Kraemer ◽  
J. Foucrier ◽  
J. Vassy ◽  
M.T. Chalumeau

Some authors using immunofluorescent techniques had already suggested that some hepatocytes are able to synthetize several plasma proteins. In vitro studies on normal cells or on cells issued of murine hepatomas raise the same conclusion. These works could be indications of an hepatocyte functionnal non-specialization, meanwhile the authors never give direct topographic proofs suitable with this hypothesis.The use of immunoenzymatic techniques after obtention of monospecific antisera had seemed to us useful to bring forward a better knowledge of this problem. We have studied three carrier proteins (transferrin = Tf, hemopexin = Hx, albumin = Alb) operating at different levels in iron metabolism by demonstrating and localizing the adult rat hepatocytes involved in their synthesis.Immunological, histological and ultrastructural methods have been described in a previous work.


Author(s):  
William J. Baxter

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.


Author(s):  
Virgil Peck ◽  
W. L. Carter

Any electron microscopical study of the morphology of bulk polymers has throughout the years been hampered by the lack of any real ability to produce meaningful surface variations for replication. True etching of polymers should show crystalline and amorphous regions in some form of relief. The use of solvents, acids, organic vapors, and inert ion bombardment to etch samples has proved to be useful only in limited applications. Certainly many interpretations of these results are subject to question.The recent use of a radiofrequency (R. F.) plasma of oxygen to degrade and remove organic material with only minor heating has opened a new possibility for etching polymers. However, rigid control of oxygen flow, time, current, and sample position are necessary in order to obtain reproducible results. The action is confined to surface layers; the molecular weight of the polymer residue after heavy etching is the same as the molecular weight of the polymer before attack, within the accuracy of measurement.


Author(s):  
H.W. Zandbergen ◽  
M.R. McCartney

Very few electron microscopy papers have been published on the atomic structure of the copper oxide based superconductor surfaces. Zandbergen et al. have reported that the surface of YBa2Cu3O7-δ was such that the terminating layer sequence is bulk-Y-CuO2-BaO-CuO-BaO, whereas the interruption at the grain boundaries is bulk-Y-CuO2-BaO-CuO. Bursill et al. reported that HREM images of the termination at the surface are in good agreement with calculated images with the same layer sequence as observed by Zandbergen et al. but with some oxygen deficiency in the two surface layers. In both studies only one or a few surfaces were studied.


Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.


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