Sub-monolayer coverages of Be grown on GaAs(001)-c(4 × 4) and (2 × 4)-β by molecular beam epitaxy studied by reflectance anisotropy spectroscopy and reflection high-energy electron diffraction

1996 ◽  
Vol 103 (1) ◽  
pp. 71-78
Author(s):  
K.C. Rose ◽  
D.A. Woolf ◽  
S.J. Morris ◽  
D.I. Westwood ◽  
R.H. Williams ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Reflectance Anisotropy

A Reflection High Energy Electron Diffraction–Reflectance Anisotropy Spectroscopy Study of Silicon Growth Dynamics During Gas Source Molecular Beam Epitaxy from Silanes

1998 ◽  
Vol 05 (03n04) ◽  
pp. 761-767 ◽  
Author(s):  
B. A. Joyce ◽  
J. Zhang ◽  
A. G. Taylor ◽  
A. K. Lees
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Film Growth ◽  
Growth Dynamics ◽  
Hydrogen Desorption ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Reflectance Anisotropy

Molecular beam epitaxy (MBE) provides an ideal experimental vehicle for the in situ study of thin film growth dynamics. By using a combination of reflection high energy electron diffraction (RHEED) and reflectance anisotropy (difference) spectroscopy [RA(D)S], it is possible to separate morphological (long range order) and local electronic structure effects, which we demonstrate with the growth of silicon films from disilane ( Si 2 H 6) on Si(001) (2 × 1)+(1 × 2) reconstructed surfaces. The rate-limiting step in Si growth from both monosilane ( SiH 4) and disilane is the desorption of molecular hydrogen and we have found using RAS that, over a significant range of temperature and coverage, hydrogen desorption follows zeroth order kinetics as the result of a step-mediated process. Finally, we show how this influences the growth rate on substrates of differing degrees of vicinality.

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 3B) ◽  
pp. L366-L369 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

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