Ion bombardment of AlN films deposited in a reactive sputtering process with accurate control of the mass flow of the reactive gas

1992 ◽  
Vol 51 (1-3) ◽  
pp. 500-508 ◽  
Author(s):  
K. Alkjærsig ◽  
H.B. Christensen ◽  
B.K. Gupta ◽  
H. Jensen ◽  
U.M. Jensen ◽  
...  
1993 ◽  
Vol 230 (2) ◽  
pp. 121-127 ◽  
Author(s):  
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G.N. Pedersen ◽  
G. Sørensen

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
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C. Labbé ◽  
C. Dufour ◽  
W. M. Jadwisienczak ◽  
J. Weimmerskirch-Aubatin ◽  
...  

Ce-Doped SiOxNy films are deposited by magnetron reactive sputtering from a CeO2 target under a nitrogen reactive gas atmosphere.


2007 ◽  
Vol 201 (18) ◽  
pp. 7727-7732 ◽  
Author(s):  
N. Martin ◽  
J. Lintymer ◽  
J. Gavoille ◽  
J.M. Chappé ◽  
F. Sthal ◽  
...  

1999 ◽  
Vol 113 (1-2) ◽  
pp. 134-139 ◽  
Author(s):  
L.R. Shaginyan ◽  
A.A. Onoprienko ◽  
V.M. Vereschaka ◽  
F. Fendrych ◽  
V.G. Vysotsky

1985 ◽  
Vol 130 (3-4) ◽  
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Author(s):  
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S. Berg ◽  
T. Larsson

2005 ◽  
Vol 476 (2) ◽  
pp. 386-390 ◽  
Author(s):  
J.W. Seong ◽  
K.W. Kim ◽  
Y.W. Beag ◽  
S.K. Koh ◽  
K.H. Yoon ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 7B) ◽  
pp. 4515-4519 ◽  
Author(s):  
Masayuki Wakatsuchi ◽  
Yoshiro Takaba ◽  
Kumiko \scshapeKanai ◽  
Yoshio Ueda ◽  
Masahiro Nishikawa

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