Reactive sputtering of TiOxNy coatings by the reactive gas pulsing process

2007 ◽  
Vol 201 (18) ◽  
pp. 7727-7732 ◽  
Author(s):  
N. Martin ◽  
J. Lintymer ◽  
J. Gavoille ◽  
J.M. Chappé ◽  
F. Sthal ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Reactive Gas

scholarly journals The nitrogen concentration effect on Ce doped SiOxNy emission: towards optimized Ce3+ for LED applications

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3823-3837 ◽  
Author(s):  
F. Ehré ◽  
C. Labbé ◽  
C. Dufour ◽  
W. M. Jadwisienczak ◽  
J. Weimmerskirch-Aubatin ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Reactive Sputtering ◽  
Concentration Effect ◽  
Gas Atmosphere ◽  
Reactive Gas

Ce-Doped SiOxNy films are deposited by magnetron reactive sputtering from a CeO2 target under a nitrogen reactive gas atmosphere.

Effect of reactive gas mass flow on the composition and structure of AIN films deposited by reactive sputtering

1993 ◽  
Vol 230 (2) ◽  
pp. 121-127 ◽  
Author(s):  
E.J.-Bienk ◽  
H. Jensen ◽  
G.N. Pedersen ◽  
G. Sørensen
Keyword(s):  
Mass Flow ◽  
Reactive Sputtering ◽  
Composition And Structure ◽  
Reactive Gas

scholarly journals Hysteresis effect during reactive sputtering

2021 ◽  
Vol 2059 (1) ◽  
pp. 012021
Author(s):  
V I Shapovalov
Keyword(s):  
Reactive Sputtering ◽  
Target Area ◽  
Algebraic Equations ◽  
Metal Target ◽  
Sticking Coefficient ◽  
Physicochemical Models ◽  
Tantalum Target ◽  
The Comparative Study ◽  
Reactive Gas ◽  
Sputtering System

Abstract In this work, we studied the effect of constant parameters of the sputtering system on the width of the hysteresis loop during reactive sputtering. The sticking coefficient of the reactive gas to the surface, the chamber pumping speed, the target area, etc. are taken as parameters. The comparative study was carried out by numerical solution of systems of algebraic equations describing the chemisorption and physicochemical models of metal target reactive sputtering in a single reactive gas. The calculations were performed for sputtering a tantalum target in an Ar + O2 mixture. The studied dependences were non-linear in all cases.

Computational modeling of reactive gas modulation in radio frequency reactive sputtering

1996 ◽  
Vol 14 (4) ◽  
pp. 2231-2234 ◽  
Author(s):  
Hidetoshi Sekiguchi ◽  
Takashi Murakami ◽  
Atsushi Kanzawa ◽  
Takahiro Imai ◽  
Takuya Honda
Keyword(s):  
Computational Modeling ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Reactive Gas

Reactive sputtering of TiOxNy coatings by the reactive gas pulsing process: Part III: The particular case of exponential pulses

2007 ◽  
Vol 201 (18) ◽  
pp. 7733-7738 ◽  
Author(s):  
N. Martin ◽  
J. Lintymer ◽  
J. Gavoille ◽  
J.M. Chappé ◽  
F. Sthal ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Reactive Gas

Reactive sputtering of TiOxNy coatings by the reactive gas pulsing process. Part I: Pattern and period of pulses

2007 ◽  
Vol 201 (18) ◽  
pp. 7720-7726 ◽  
Author(s):  
N. Martin ◽  
J. Lintymer ◽  
J. Gavoille ◽  
J.M. Chappé ◽  
F. Sthal ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Reactive Gas

Water as reactive gas to prepare titanium oxynitride thin films by reactive sputtering

2003 ◽  
Vol 440 (1-2) ◽  
pp. 66-73 ◽  
Author(s):  
Jean-Marie Chappé ◽  
Nicolas Martin ◽  
Guy Terwagne ◽  
Jan Lintymer ◽  
Joseph Gavoille ◽  
...  
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Reactive Gas

Ion bombardment of AlN films deposited in a reactive sputtering process with accurate control of the mass flow of the reactive gas

1992 ◽  
Vol 51 (1-3) ◽  
pp. 500-508 ◽  
Author(s):  
K. Alkjærsig ◽  
H.B. Christensen ◽  
B.K. Gupta ◽  
H. Jensen ◽  
U.M. Jensen ◽  
...  
Keyword(s):  
Mass Flow ◽  
Ion Bombardment ◽  
Reactive Sputtering ◽  
Reactive Gas

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Transparency Improvement of SiCO Thin Film for Optical Waveguide with Reactive Sputtering Method

2020 ◽  
Vol 140 (12) ◽  
pp. 369-373
Author(s):  
Hiroyuki Nikkuni ◽  
Chizuru Numata ◽  
Ryoto Yamaji ◽  
Hiroshi Ito ◽  
Yoshio Kawamata
Keyword(s):  
Thin Film ◽  
Optical Waveguide ◽  
Reactive Sputtering
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