Effect of reactive gas mass flow on the composition and structure of AIN films deposited by reactive sputtering

1993 ◽  
Vol 230 (2) ◽  
pp. 121-127 ◽  
Author(s):  
E.J.-Bienk ◽  
H. Jensen ◽  
G.N. Pedersen ◽  
G. Sørensen
Keyword(s):  
Mass Flow ◽  
Reactive Sputtering ◽  
Composition And Structure ◽  
Reactive Gas

Ion bombardment of AlN films deposited in a reactive sputtering process with accurate control of the mass flow of the reactive gas

1992 ◽  
Vol 51 (1-3) ◽  
pp. 500-508 ◽  
Author(s):  
K. Alkjærsig ◽  
H.B. Christensen ◽  
B.K. Gupta ◽  
H. Jensen ◽  
U.M. Jensen ◽  
...  
Keyword(s):  
Mass Flow ◽  
Ion Bombardment ◽  
Reactive Sputtering ◽  
Reactive Gas

scholarly journals The nitrogen concentration effect on Ce doped SiOxNy emission: towards optimized Ce3+ for LED applications

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3823-3837 ◽  
Author(s):  
F. Ehré ◽  
C. Labbé ◽  
C. Dufour ◽  
W. M. Jadwisienczak ◽  
J. Weimmerskirch-Aubatin ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Reactive Sputtering ◽  
Concentration Effect ◽  
Gas Atmosphere ◽  
Reactive Gas

Ce-Doped SiOxNy films are deposited by magnetron reactive sputtering from a CeO2 target under a nitrogen reactive gas atmosphere.

Reactive sputtering of TiOxNy coatings by the reactive gas pulsing process

2007 ◽  
Vol 201 (18) ◽  
pp. 7727-7732 ◽  
Author(s):  
N. Martin ◽  
J. Lintymer ◽  
J. Gavoille ◽  
J.M. Chappé ◽  
F. Sthal ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Reactive Gas

Composition and Structure Control of Cu–Al–O Films Prepared by Reactive Sputtering and Annealing

2007 ◽  
Vol 46 (1) ◽  
pp. 351-355 ◽  
Author(s):  
Nozomu Tsuboi ◽  
Yuji Itoh ◽  
Junya Ogata ◽  
Satoshi Kobayashi ◽  
Hidehiko Shimizu ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Structure Control ◽  
Composition And Structure

Composition and Structure Characterization of WNx Films Produced by RF Reactive Sputtering

1990 ◽  
Vol 187 ◽  
Author(s):  
Dongliang Lin ◽  
Bewda Yan ◽  
Weili Yu
Keyword(s):  
Partial Pressure ◽  
Pressure Ratio ◽  
Reactive Sputtering ◽  
Structure Characterization ◽  
Working Pressure ◽  
Composition And Structure ◽  
Crystalline Films ◽  
Deposited Film ◽  
Partial Pressure Ratio

AbstractWNx film is one of the most promising materials for self-aligned GaAs NASFET because of its low electrical resistivity and high Schottky Barrier Height at the WNx /GaAs contact.In this paper, the effect of the sputtering conditions and the annealing environment on the chemical composition and structure of the WNx films deposited on Si and GaAs by RF reactive sputtering are studied.The results show that with the increase of the partial pressure ratio of nitrogen gas or decrease of the working pressure, deposition rate of WNx film decreases, whereas the atomic percentage of N in the deposited film increases before approaching saturation. The WNx films formed at high working pressure (≈5 × 10−2 torr) consist of W, WN or W2N phases depending on the nitrogen partial pressure ratio. Whereas the films formed at low working pressure (≈ 3 × 10−3 torr) are usually amorphous. Annealing in a flowing N2 gas causes the crystallization of the amorphous films, which mainly consist of W+W2N. There is no change for the crystalline films. However, annealing in H2 gas causes severe loss of nitrogen of the film, the film becoming single W phase eventually.

Mass flow limitations in reactive sputtering

1985 ◽  
Vol 130 (3-4) ◽  
pp. 307-313 ◽  
Author(s):  
H.-O. Blom ◽  
S. Berg ◽  
T. Larsson
Keyword(s):  
Mass Flow ◽  
Reactive Sputtering

scholarly journals Hysteresis effect during reactive sputtering

2021 ◽  
Vol 2059 (1) ◽  
pp. 012021
Author(s):  
V I Shapovalov
Keyword(s):  
Reactive Sputtering ◽  
Target Area ◽  
Algebraic Equations ◽  
Metal Target ◽  
Sticking Coefficient ◽  
Physicochemical Models ◽  
Tantalum Target ◽  
The Comparative Study ◽  
Reactive Gas ◽  
Sputtering System

Abstract In this work, we studied the effect of constant parameters of the sputtering system on the width of the hysteresis loop during reactive sputtering. The sticking coefficient of the reactive gas to the surface, the chamber pumping speed, the target area, etc. are taken as parameters. The comparative study was carried out by numerical solution of systems of algebraic equations describing the chemisorption and physicochemical models of metal target reactive sputtering in a single reactive gas. The calculations were performed for sputtering a tantalum target in an Ar + O2 mixture. The studied dependences were non-linear in all cases.

Computational modeling of reactive gas modulation in radio frequency reactive sputtering

1996 ◽  
Vol 14 (4) ◽  
pp. 2231-2234 ◽  
Author(s):  
Hidetoshi Sekiguchi ◽  
Takashi Murakami ◽  
Atsushi Kanzawa ◽  
Takahiro Imai ◽  
Takuya Honda
Keyword(s):  
Computational Modeling ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Reactive Gas

Reactive sputtering of TiOxNy coatings by the reactive gas pulsing process: Part III: The particular case of exponential pulses

2007 ◽  
Vol 201 (18) ◽  
pp. 7733-7738 ◽  
Author(s):  
N. Martin ◽  
J. Lintymer ◽  
J. Gavoille ◽  
J.M. Chappé ◽  
F. Sthal ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Reactive Gas

Reactive sputtering of TiOxNy coatings by the reactive gas pulsing process. Part I: Pattern and period of pulses

2007 ◽  
Vol 201 (18) ◽  
pp. 7720-7726 ◽  
Author(s):  
N. Martin ◽  
J. Lintymer ◽  
J. Gavoille ◽  
J.M. Chappé ◽  
F. Sthal ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Reactive Gas
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