In situ observation of epitaxial growth of Co thin films on Cu(100)

1992 ◽  
Vol 42-44 ◽  
pp. 483-489 ◽  
Author(s):  
A.K. Schmid ◽  
J. Kirschner
2007 ◽  
Vol 2007.42 (0) ◽  
pp. 223-224
Author(s):  
Yuta NOHARA ◽  
Takao TSURUI ◽  
Yuki NAGAO ◽  
Noriko SATA ◽  
Fumitada IGUCHI ◽  
...  

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.


1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.


1998 ◽  
Vol 15 (5) ◽  
pp. 373-375 ◽  
Author(s):  
Ying-zi Zhang ◽  
Duo-gui Yang ◽  
Lin Li ◽  
Bai-ru Zhao ◽  
Shun-lian Jia ◽  
...  

2020 ◽  
Vol 180 ◽  
pp. 97-102 ◽  
Author(s):  
Qizhen Li ◽  
Lihua Wang ◽  
Jiao Teng ◽  
Xiaolu Pang ◽  
Xiaodong Han ◽  
...  

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