Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

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Fabrication of High Quality Poly-Si From Fluorinated Precursors

MRS Proceedings ◽

10.1557/proc-297-79 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 4

Author(s):

Shin-Ichi Ishihara ◽

Deyan He ◽

Tetsuya Akasaka ◽

Yuzoh Araki ◽

Isamu Shimizu

Keyword(s):

Thin Films ◽

Activation Energy ◽

Electrical Conductivity ◽

Thin Layer ◽

Atomic Hydrogen ◽

Solid Phase ◽

Chemical Interaction ◽

In Situ Observation ◽

High Quality

Poly-Si thin films with grains 100–200 nm in dia. showing a highly ordered texture were grown from fluorinated precursors, SiFnHm (n+m=3), on a glass substrate at 300–400 °C with the aid of atomic hydrogen. According to the in situ observation by ellipsometry, the reconstruction was undergone in a solid phase stimulated by impinging atomic hydrogens within a thin layer of about 10 nm thick owing to the strong chemical interaction of the pair of H and F in Si-network. Both H and F were released efficiently from the network to the levels of 2 × 1020 cm−3 and (2−5) × 1019 cm−3, respectively. Dangling bonds were also efficiently passivated down to 4 × 1016 cm−3 with hydrogens diffused through the network. P-doped films showing electrical conductivity of 10−2 S/cm (300 °K) with the activation energy of 0.24 eV was obtained by alternately repeating the deposition of thin layer and the treatment with atomic hydrogens.

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Epitaxial growth manner and structure of superconducting oxide films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173145 ◽

1990 ◽

Vol 48 (4) ◽

pp. 2-3

Author(s):

Yoshichika Bando ◽

Takahito Terashima ◽

Kenji Iijima ◽

Kazunuki Yamamoto ◽

Kazuto Hirata ◽

...

Keyword(s):

Ultrathin Films ◽

Film Surface ◽

High Energy ◽

Epitaxial Films ◽

Layer By Layer ◽

Initial Growth ◽

In Situ Growth ◽

High Quality ◽

Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

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High‐Quality Thin Films of UiO‐66‐NH2 by Coordination Modulated Layer‐by‐Layer Liquid Phase Epitaxy

Chemistry - A European Journal ◽

10.1002/chem.202005416 ◽

2021 ◽

Author(s):

Roland A. Fischer ◽

A. Lisa Semrau

Keyword(s):

Thin Films ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Layer By Layer ◽

High Quality

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In situ observation of atomic hydrogen etching on diamond-like carbon films produced by pulsed laser deposition

Applied Surface Science ◽

10.1016/s0169-4332(01)00170-2 ◽

2001 ◽

Vol 174 (3-4) ◽

pp. 251-256 ◽

Cited By ~ 4

Author(s):

C.-L Cheng ◽

C.-T Chia ◽

C.-C Chiu ◽

C.-C Wu ◽

H.-F Cheng ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Atomic Hydrogen ◽

Pulsed Laser ◽

Carbon Films ◽

Laser Deposition ◽

Diamond Like Carbon ◽

In Situ Observation ◽

Hydrogen Etching

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In-Situ Diagnostics at High Pressures: Ellipsometric and Rheed Studies of the Growth of Yba2Cu3O7

MRS Proceedings ◽

10.1557/proc-502-237 ◽

1997 ◽

Vol 502 ◽

Cited By ~ 4

Author(s):

Dave H. A. Blank ◽

Horst Rogalla

Keyword(s):

Thin Films ◽

High Pressures ◽

High Vacuum ◽

Pulsed Laser ◽

Complex Oxide ◽

High Energy ◽

Diagnostic Tools ◽

Heteroepitaxial Growth ◽

Deposition Parameters

ABSTRACTPulsed Laser and Sputter Deposition are used for the fabrication of complex oxide thin films at relatively high oxygen pressures (up to 0.5 mBar). This high pressure hampers the application of a number of in-situ diagnostic tools. One of the exceptions is ellipsometry. Using this technique we studied in-situ the growth of off-axis sputtered Yba2Cu3O6+x thin films on (001) SrTiO3 as a function of the deposition parameters. Furthermore, the oxidation process from O(6) to O(7) has been studied by performing spectroscopic ellipsometry during isobaric cooling procedures.Another suitable in-situ monitoring technique for the growth of thin films is Reflection High Energy Electron Diffraction (RHEED). In general this is a (high) vacuum technique. Here, we present an RHEED-system in which we can observe clear diffraction patterns up to a deposition pressure of 0.5 mBar. The system has been used for in-situ monitoring of the heteroepitaxial growth of YBa2Cu3 06+x on SrTiO3 by pulsed laser deposition.

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In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

physica status solidi (a) ◽

10.1002/pssa.201330056 ◽

2013 ◽

Vol 210 (12) ◽

pp. 2729-2735 ◽

Cited By ~ 1

Author(s):

Ingmar Höger ◽

Thomas Schmidt ◽

Anja Landgraf ◽

Martin Schade ◽

Annett Gawlik ◽

...

Keyword(s):

Thin Films ◽

Laser Irradiation ◽

Excimer Laser ◽

Polycrystalline Silicon ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Silicon Thin Films ◽

Excimer Laser Irradiation

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Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

MRS Proceedings ◽

10.1557/proc-574-11 ◽

1999 ◽

Vol 574 ◽

Author(s):

D. Kumar ◽

K. G. Cho ◽

Zhang Chen ◽

V. Craciun ◽

P. H. Holloway ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Yttrium Oxide ◽

Lattice Mismatch ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

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