Calculation of the green's function for the micromagnetic thin film problem

1983 ◽  
Vol 37 (1) ◽  
pp. 11-29 ◽  
Author(s):  
W. Maass ◽  
U. Krey ◽  
H. Hoffmann
Keyword(s):  
Thin Film ◽  
Green’S Function ◽  
Green's Function

A variational–Green's function approach to theoretical treatment and applications of the capacitance of three-dimensional geometries

1982 ◽  
Vol 60 (2) ◽  
pp. 179-195 ◽  
Author(s):  
Andreas Mandelis
Keyword(s):  
Thin Film ◽  
Spatial Distribution ◽  
Green’S Function ◽  
Green's Function ◽  
Finite Thickness ◽  
Three Dimensional ◽  
Function Approach ◽  
Theoretical Treatment ◽  
One Dimensional

A combined variational–Green's function approach to the determination of the capacitance of various useful three-dimensional geometries is developed. This formalism leads to general, exact expressions for the capacitance, which can be used with all geometries provided the spatial distribution of the charge can be determined. In particular, the theory takes into account the finite thickness and unequal areas of the capacitor plates. Specific applications of the theory include circular capacitors with disc and ring-shaped charged plate geometries. Such geometries are commonly encountered in experimental set-ups for capacitive measurements of thin film thicknesses in the field of microelectronics. Numerical results indicate that the values of thin film thicknesses calculated via simplified one-dimensional formulae for the capacitance may be incorrect by more than 10%

Green's Function Approach to Crossover Properties for Interaction Parameters of an N-Layer Ferroelectric Thin Film

2010 ◽  
Vol 152-153 ◽  
pp. 116-120
Author(s):  
Zhao Xin Lu ◽  
Bao Hua Teng ◽  
Xin Yang
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Green’S Function ◽  
Green's Function ◽  
Ferroelectric Thin Film ◽  
Higher Order ◽  
Interaction Parameters ◽  
Mean Field Approximation ◽  
Decoupling Approximation ◽  
Dominant Phase

Utilizing the higher order decoupling approximation to the Fermi-type Green’s function, crossover properties of interaction parameters of an n-layer ferroelectric thin film from the ferroelectric-dominant phase diagram (FPD) to the paraelectric-dominant phase diagram (PPD) are investigated on the basis of the transverse Ising model. The curved surfaces for crossover values of interaction parameters of a thin film with certain layers are constructed in the three-dimensional parameter space. Because both the z-component <Sz> (the polarization) and the transverse component <Sx> of the spin are further included in the eigenfrequency, the results are in agreement with that of the effective-field theory with correlations to some extent. It shows that the higher order decoupling approximation diminishes the ferroelectric feature of a ferroelectric thin film compared with the usual mean-field approximation.

Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method

2006 ◽  
Vol 129 (4) ◽  
pp. 483-491 ◽  
Author(s):  
W. Zhang ◽  
T. S. Fisher ◽  
N. Mingo
Keyword(s):  
Thin Film ◽  
Thermal Resistance ◽  
Green’S Function ◽  
Green's Function ◽  
Function Method ◽  
Thermal Conductance ◽  
Transmission Function ◽  
Phonon Transport ◽  
Silicon Thin Film ◽  
Green’S Function Method

An atomistic Green’s function method is developed to simulate phonon transport across a strained germanium (or silicon) thin film between two semi-infinite silicon (or germanium) contacts. A plane-wave formulation is employed to handle the translational symmetry in directions parallel to the interfaces. The phonon transmission function and thermal conductance across the thin film are evaluated for various atomic configurations. The contributions from lattice straining and material heterogeneity are evaluated separately, and their relative magnitudes are characterized. The dependence of thermal conductance on film thickness is also calculated, verifying that the thermal conductance reaches an asymptotic value for very thick films. The thermal boundary resistance of a single Si∕Ge interface is computed and agrees well with analytical model predictions. Multiple-interface effects on thermal resistance are investigated, and the results indicate that the first few interfaces have the most significant effect on the overall thermal resistance.

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