Undoped and Pd-doped SnO2 thin films for gas sensors

1993 ◽  
Vol 16 (1-3) ◽  
pp. 357-362 ◽  
Author(s):  
B. Gautheron ◽  
M. Labeau ◽  
G. Delabouglise ◽  
U. Schmatz
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Sno2 Thin Films

Characteristics of reactively sputtered Pt–SnO2 thin films for CO gas sensors

1996 ◽  
Vol 14 (4) ◽  
pp. 2215-2219 ◽  
Author(s):  
M. Di Giulio ◽  
G. Micocci ◽  
A. Serra ◽  
A. Tepore ◽  
R. Rella ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Sno2 Thin Films ◽  
Co Gas

Microstructural development during the oxidation process in SnO2 thin films for gas sensors

1994 ◽  
Vol 19 (1-3) ◽  
pp. 637-641 ◽  
Author(s):  
T. Aste ◽  
D. Beruto ◽  
R. Botter ◽  
C. Ciccarelli ◽  
M. Giordani ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Oxidation Process ◽  
Microstructural Development ◽  
Sno2 Thin Films

A Simple and Effective Route to Annihilate Defects in Nanocrystalline SnO2 Thin Films Prepared by Pulsed Laser Deposition

2007 ◽  
Vol 1026 ◽  
Author(s):  
Zhiwen Chen ◽  
C. M. L. Wu ◽  
C. H. Shek ◽  
J. K. L. Lai ◽  
Z. Jiao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Sno2 Thin Films

AbstractThe microstructural defects of nanocrystalline SnO2 thin films prepared by pulsed laser deposition have been investigated using transmission electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy. Defects inside nanocrystalline SnO2 thin films could be significantly reduced by annealing the SnO2 thin films at 300 °C for 2 h. High-resolution transmission electron microscopy showed that stacking faults and twins were annihilated upon annealing. In particular, the edges of the SnO2 nanoparticles demonstrated perfect lattices free of defects after annealing. Raman spectra also confirmed that annealing the specimen was almost defect-free. By using thermal annealing, defect-free nanocrystalline SnO2 thin films can be prepared in a simple and practical way, which holds promise for applications as transparent electrodes and solid-state gas sensors.

Sb and Bi implanted SnO2 thin films: photoemission studies and application as gas sensors

1993 ◽  
Vol 70-71 ◽  
pp. 359-362 ◽  
Author(s):  
R.S. Dale ◽  
C.S. Rastomjee ◽  
F.H. Potter ◽  
R.G. Egdell ◽  
T.J. Tate
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Sno2 Thin Films

Chemical composition and crystalline structure of SnO2 thin films used as gas sensors

1997 ◽  
Vol 304 (1-2) ◽  
pp. 113-122 ◽  
Author(s):  
P. Serrini ◽  
V. Briois ◽  
M.C. Horrillo ◽  
A. Traverse ◽  
L. Manes
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Crystalline Structure ◽  
Gas Sensors ◽  
Sno2 Thin Films

MOCVD and properties of in situ doped Pt-SnO2 thin films

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-643-Pr8-650 ◽  
Author(s):  
M. Amjoud ◽  
F. Maury
Keyword(s):  
Thin Films ◽  
Sno2 Thin Films

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

scholarly journals On the Use of MOFs and ALD Layers as Nanomembranes for the Enhancement of Gas Sensors Selectivity

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1552 ◽  
Author(s):  
Weber ◽  
Graniel ◽  
Balme ◽  
Miele ◽  
Bechelany
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Metal Organic Frameworks ◽  
Atomic Layer ◽  
Operational Performance ◽  
Layer Deposition ◽  
Metal Organic ◽  
Further Development ◽  
Different Gases

Improving the selectivity of gas sensors is crucial for their further development. One effective route to enhance this key property of sensors is the use of selective nanomembrane materials. This work aims to present how metal-organic frameworks (MOFs) and thin films prepared by atomic layer deposition (ALD) can be applied as nanomembranes to separate different gases, and hence improve the selectivity of gas sensing devices. First, the fundamentals of the mechanisms and configuration of gas sensors will be given. A selected list of studies will then be presented to illustrate how MOFs and ALD materials can be implemented as nanomembranes and how they can be implemented to improve the operational performance of gas sensing devices. This review comprehensively shows the benefits of these novel selective nanomaterials and opens prospects for the sensing community.

Heteroepitaxy of SnO2 thin films on m-plane sapphire by MOCVD

2011 ◽  
Vol 324 (1) ◽  
pp. 98-102 ◽  
Author(s):  
Zhen Zhu ◽  
Jin Ma ◽  
Lingyi Kong ◽  
Caina Luan ◽  
Qiaoqun Yu
Keyword(s):  
Thin Films ◽  
Sno2 Thin Films
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