Investigation of homoepitaxial growth by microwave plasma CVD providing high growth rate and high quality of diamond simultaneously

2020 ◽  
Vol 22 ◽  
pp. 100816 ◽  
Author(s):  
A.L. Vikharev ◽  
M.A. Lobaev ◽  
A.M. Gorbachev ◽  
D.B. Radishev ◽  
V.A. Isaev ◽  
...  
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Microwave Plasma Cvd

Morphology of Diamond Films Grown by DC Plasma Jet CVD

1989 ◽  
Vol 162 ◽  
Author(s):  
Kazuaki Kurihara ◽  
Ken-Ichi Sasaki ◽  
Motonobu Kawarada ◽  
Nagaaki Koshino
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
Diamond Films ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Dc Plasma ◽  
Synthesis Conditions ◽  
Microwave Plasma Cvd

ABSTRACTIt is well known that diamond films synthesized from the gas phase have well defined crystal habits which are affected strongly by synthesis conditions. Though there have been many studies of the morphologies of diamond films synthesized by microwave plasma CVD [1,2,3], there have been relatively few reports on the morphologies of these films grown using new high growth rate techniques such as DC plasma jet CVD [4]. Morphology control is very important to keep flat surface, when producing thick diamond films by high growth rate techniques. In this paper we report our investigation of the morphology and growth of diamond films synthesized by DC plasma jet CVD.

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

2015 ◽  
Vol 821-823 ◽  
pp. 133-136 ◽  
Author(s):  
Takanori Tanaka ◽  
Naoyuki Kawabata ◽  
Yoichiro Mitani ◽  
Masashi Sakai ◽  
Nobuyuki Tomita ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Throughput ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Pressure Condition ◽  
High Quality ◽  
Growth Pressure ◽  
Hcl Gas

The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm2, indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system.

Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1673-1677 ◽  
Author(s):  
H. Guo ◽  
Z.L. Sun ◽  
Q.Y. He ◽  
S.M. Du ◽  
X.B. Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Arc Plasma ◽  
Large Area ◽  
High Quality ◽  
Dc Arc

scholarly journals Trial of Diamond Synthesis with High-Growth Rate by DC Plasma CVD Using a Diamond Cathode.

1999 ◽  
Vol 50 (7) ◽  
pp. 650-651
Author(s):  
Toshihide MIKAMI ◽  
Yutaka ISHIKAWA ◽  
Hiroshi YAMANAKA ◽  
Yoichi HIROSE
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Diamond Synthesis ◽  
Plasma Cvd ◽  
Dc Plasma

Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD

2003 ◽  
Vol 76 (6) ◽  
pp. 953-955 ◽  
Author(s):  
W.J. Zhang ◽  
C.Y. Chan ◽  
K.M. Chan ◽  
I. Bello ◽  
Y. Lifshitz ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Plasma Cvd ◽  
Large Area ◽  
High Quality ◽  
Microwave Plasma Cvd ◽  
Boron Nitride Films

High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD

2001 ◽  
Vol 66 (1-4) ◽  
pp. 283-288 ◽  
Author(s):  
Koji Endo ◽  
Masao Isomura ◽  
Mikio Taguchi ◽  
Hisaki Tarui ◽  
Seiichi Kiyama
Keyword(s):  
Growth Rate ◽  
Crystalline Silicon ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Helicon Wave ◽  
Helicon Wave Plasma

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

2004 ◽  
Vol 815 ◽  
Author(s):  
H. Tsuchida ◽  
I. Kamata ◽  
S. Izumi ◽  
T. Tawara ◽  
T. Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Defect Density ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
Effective Lifetime ◽  
Growth Technique ◽  
Homoepitaxial Growth

AbstractGrowth technique for thick SiC epilayers with a reduced micropipe density has been developed in a vertical hot-wall CVD reactor. Micropipe closing by growing an epilayer is possible with a nearly 100% probability for 4H-SiC substrates oriented (0001) and (000-1) off-cut towards either [11-20] or [1-100]. By applying the micropipe closing technique, a high-performance Schottky barrier diode (SBD) was demonstrated on a substrate including micropipes. Growth of low-doped and thick SiC epilayers is also possible with a good morphology at a high growth rate, and 14.4 kV blocking performance was demonstrated using a 210 μm-thick epilayer. Epitaxial growth on (000-1) substrates with low doping and a low epi-induced defect density was also demonstrated. Deep centers and impurities were investigated to determine the effective lifetime killer of the epilayers. Dislocations and stacking faults in epilayers grown on 4H-SiC substrates off-cut towards different directions were also investigated.

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