SEMICONDUCTOR OPTICAL NONLINEARITIES AND APPLICATIONS TO OPTICAL DEVICES AND BISTABILITY

Author(s):  
N. Peyghambarian ◽  
H.M. Gibbs
2020 ◽  
Vol 4 (7) ◽  
pp. 2081-2088 ◽  
Author(s):  
Han Pan ◽  
Hongwei Chu ◽  
Xiao Wang ◽  
Ying Li ◽  
Shengzhi Zhao ◽  
...  

Optical nonlinearities of zeolitic imidazolate framework-67 (ZIF-67) were determined in the near-infrared region. The high TPA cross section and large third-order susceptibility demonstrate the potential of ZIF-67 for nonlinear optical devices.


1995 ◽  
pp. 371-379 ◽  
Author(s):  
George Stegeman ◽  
Roland Schiek ◽  
Gijs Krijnen ◽  
William Torruellas ◽  
Mike Sundheimer ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (5) ◽  
pp. 139
Author(s):  
Ahmed Mekawy ◽  
Dimitrios L. Sounas ◽  
Andrea Alù

Optical nonlinearities can enable unusual light–matter interactions, with functionalities that would be otherwise inaccessible relying only on linear phenomena. Recently, several studies have harnessed the role of optical nonlinearities to implement nonreciprocal optical devices that do not require an external bias breaking time-reversal symmetry. In this work, we explore the design of a metasurface embedding Kerr nonlinearities to break reciprocity for free-space propagation, requiring limited power levels. After deriving the general design principles, we demonstrate an all-dielectric flat metasurface made of coupled nonlinear Fano silicon resonant layers realizing large asymmetry in optical transmission at telecommunication frequencies. We show that the metrics of our design can go beyond the fundamental limitations on nonreciprocity for nonlinear optical devices based on a single resonance, as dictated by time-reversal symmetry considerations. Our work may shed light on the design of flat subwavelength free-space nonreciprocal metasurface switches for pulsed operation which are easy to fabricate, fully passive, and require low operation power. Our simulated devices demonstrate a transmission ratio >50 dB for oppositely propagating waves, an operational bandwidth exceeding 600 GHz, and an insertion loss of <0.04 dB.


Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.


Author(s):  
Yoshiaki. KIYANAGI ◽  
Kazuhiko SOYAMA ◽  
Hirohiko SHIMIZU ◽  
Seiji TASAKI ◽  
Hiroyuki TAKAHASHI

2020 ◽  
Author(s):  
Haoyang Yu ◽  
Alyxandra Thiessen ◽  
Md Asjad Hossain ◽  
Marc Julian Kloberg ◽  
Bernhard Rieger ◽  
...  

<div><div><div><p>Covalently bonded organic monolayers play important roles in defining the solution processability, ambient stability, and electronic properties of two-dimensional (2D) materials such as Ge nanosheets (GeNSs); they also hold promise of providing avenues for the fabrication of future generation electronic and optical devices. Functionalization of GeNS normally involves surface moieties linked through covalent Ge−C bonds. In the present contribution we extend the scope of surface linkages to include Si−Ge bonding and present the first demonstration of heteronuclear dehydrocoupling of organosilanes to hydride-terminated GeNSs obtained from the deintercalation and exfoliation of CaGe2. We further exploit this new surface reactivity and demonstrated the preparation of directly bonded silicon quantum dot-Ge nanosheet hybrids.</p></div></div></div>


1999 ◽  
Author(s):  
David Rutledge
Keyword(s):  

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