Low temperature, high growth rate epitaxial silicon and silicon germanium alloy films

2004 ◽  
Vol 224 (1-4) ◽  
pp. 41-45 ◽  
Author(s):  
Michael A Todd ◽  
Keith D Weeks
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Silicon Germanium ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Silicon ◽  
Alloy Films ◽  
Germanium Alloy

scholarly journals High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

2018 ◽  
Vol 112 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kevin L. Schulte ◽  
Anna Braun ◽  
John Simon ◽  
Aaron J. Ptak
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Extreme Supersaturation of Oxygen in Low Temperature Epitaxial Silicon and Silicon-Germanium Alloys

1989 ◽  
Vol 163 ◽  
Author(s):  
P.V. Schwartz ◽  
J.C. Sturm ◽  
P.M. Garone ◽  
S.A. Schwarz
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Silicon Germanium ◽  
Stacking Faults ◽  
Exact Nature ◽  
Epitaxial Silicon ◽  
Infrared Transmission ◽  
Temperature Growth ◽  
Structural And Electrical Properties ◽  
Germanium Alloy

AbstractWe report the low temperature growth (625 - 700 °C) of epitaxial silicon and silicon-germanium alloy films by vapor phase techniques with oxygen concentrations approximately 1020 cm-3. These concentrations are well above the accepted solid solubility for oxygen in silicon. The films, however, have excellent structural and electrical properties with virtually no stacking faults or “haze”. Infrared transmission analysis suggests the possible presence of OH, but the exact nature of the oxygen is not known.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

2019 ◽  
Vol 485 ◽  
pp. 381-390 ◽  
Author(s):  
Taewook Nam ◽  
Hyunho Lee ◽  
Taejin Choi ◽  
Seunggi Seo ◽  
Chang Mo Yoon ◽  
...  
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
High Growth ◽  
High Growth Rate
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