Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

2019 ◽  
Vol 485 ◽  
pp. 381-390 ◽  
Author(s):  
Taewook Nam ◽  
Hyunho Lee ◽  
Taejin Choi ◽  
Seunggi Seo ◽  
Chang Mo Yoon ◽  
...  
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
High Growth ◽  
High Growth Rate

scholarly journals High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

2018 ◽  
Vol 112 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kevin L. Schulte ◽  
Anna Braun ◽  
John Simon ◽  
Aaron J. Ptak
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

2020 ◽  
Vol 8 (37) ◽  
pp. 13033-13039
Author(s):  
Harrison Sejoon Kim ◽  
Su Min Hwang ◽  
Xin Meng ◽  
Young-Chul Byun ◽  
Yong Chan Jung ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Nitride ◽  
Low Temperature ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Layer Deposition ◽  
Wet Etch

Trisilylamine homolog, tris(disilanyl)amine (TDSA), is introduced as a novel precursor for the deposition of highly etch resistant silicon nitride thin films having a high growth rate at a low temperature (<300 °C) using plasma enhanced ALD process.

HIGH GROWTH-RATE DEPOSITION OF μc-Si:H THIN FILM AT LOW TEMPERATURE WITH VHF-PECVD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4259-4262 ◽  
Author(s):  
HUIDONG YANG ◽  
CHUNYA WU ◽  
YAOHUA MAI ◽  
HONGBO LI ◽  
YAN LI ◽  
...  
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Growth Rates ◽  
Optical Emission Spectroscopy ◽  
Excitation Frequency ◽  
High Growth ◽  
Optical Emission ◽  
High Growth Rate ◽  
Working Pressure ◽  
The Relationship

High growth rate deposition of μ c - Si:H film with VHF-PECVD at low temperature has been reported. Investigations showed that growth rates enhanced with higher excitation frequency and working pressure, but increased at first then decreased with the increase of plasma power. Optical emission spectroscopy (OES) was introduced to monitor VHF plasma. The relationship between the growth rates and the OES results has been discussed. Raman spectra were also used to study the a - Si:H /μ c - Si:H phase transition. Finally a high growth rate of 2.0nm/s has been obtained through the initially optimized condition.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 354
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Sign in / Sign up

Export Citation Format

Share Document