Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
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The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
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2013 ◽
Vol 740-742
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pp. 23-26
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2011 ◽
Vol 679-680
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pp. 115-118
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2010 ◽
Vol 645-648
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pp. 63-66
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2008 ◽
Vol 254
(19)
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pp. 6072-6075
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2019 ◽
Vol 485
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pp. 381-390
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