Room temperature electrodeposition and characterization of bismuth ferric oxide (BFO) thin films from aqueous nitrate bath

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

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Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

MRS Proceedings ◽

10.1557/proc-703-v3.4 ◽

2001 ◽

Vol 703 ◽

Author(s):

Huiping Xu ◽

Adam T. Wise ◽

Timothy J. Klemmer ◽

Jörg M. K. Wiezorek

Keyword(s):

Thin Films ◽

Grain Growth ◽

Room Temperature ◽

Si Substrate ◽

Ferromagnetic Thin Films ◽

Precipitation Reactions ◽

Post Deposition ◽

Xrd And Tem ◽

Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

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Structural Evolution Upon Annealing of Multi-Layer Si/Fe Thin Films Prepared by Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.561-565.1161 ◽

2007 ◽

Vol 561-565 ◽

pp. 1161-1164

Author(s):

Xiao Na Li ◽

Bing Hu ◽

Chuang Dong ◽

Xin Jiang

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Room Temperature ◽

Structural Evolution ◽

Radio Frequency Magnetron Sputtering ◽

Transmission Electron ◽

Direct Band ◽

The Stability ◽

Sputtering System

Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/β-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of β-FeSi2 film on the preparation parameters. It was found that β-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm ,with a direct band-gap of 0.94eV in room temperature. After annealing at 850°C, particles grow lager, however the stability of thin films was still good.

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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.08.048 ◽

2013 ◽

Vol 370 ◽

pp. 63-67 ◽

Cited By ~ 16

Author(s):

S. Gautier ◽

T. Moudakir ◽

G. Patriarche ◽

D.J. Rogers ◽

V.E. Sandana ◽

...

Keyword(s):

Thin Films ◽

Wafer Bonding ◽

Room Temperature ◽

Wafer Scale ◽

Glass Substrates ◽

Direct Wafer Bonding ◽

Movpe Growth ◽

Lift Off ◽

Compositional Characterization

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Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

MRS Proceedings ◽

10.1557/proc-1245-a18-04 ◽

2010 ◽

Vol 1245 ◽

Cited By ~ 1

Author(s):

Reza Anvari ◽

Qi Cheng ◽

Muhammad Lutful Hai ◽

Truc Phan Bui ◽

A. J. Syllaios ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Silicon Germanium ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Germanium Oxide ◽

Temperature Coefficient Of Resistance ◽

Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

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