Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements

ABSTRACTTEM, X-ray diffraction, and electrical resistivity measurements were used to study the microstructure and the growth of AI-Cr-AI film sandwiches, where the individual Al layers were 300 Å thick and the Cr thickness was varied between 0–10 atomic layers. The base vacuum was around 1.0 × 10−10 torr, substrate temperatures varied between 100–350 °C, and evaporation rates were 3Å/s for Al and ∼0.1 – 0.2 Å/s for Cr. All Al films had a strong (111) texture and showed a non-percolative island structure at 350 °C. The films became connected at lower substrate temperatures, reaching perfect continuity at 100°C. However, electrical conductivity is achieved also for the films deposited at 350 °C when one or more atomic layers of Cr are sandwiched between the Al layers. Results for the superconducting critical temperature and resistivity are discussed in terms of Cr diffusion into Al and the film size effect.

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Evolution of crystal structure of dual layered molecular conductor (ET)4ZnBr4(C6H4Cl2) with temperature

CrystEngComm ◽

10.1039/d1ce00902h ◽

2021 ◽

Author(s):

Gennady V. Shilov ◽

Elena I. Zhilyaeva ◽

Sergey M. Aldoshin ◽

Alexandra M Flakina ◽

Rustem B. Lyubovskii ◽

...

Keyword(s):

Crystal Structure ◽

Electrical Resistivity ◽

Single Crystal ◽

Room Temperature ◽

Organic Conductor ◽

X Ray Diffraction ◽

X Ray ◽

Resistivity Measurements ◽

Molecular Conductor ◽

Abrupt Changes

Electrical resistivity measurements of a dual layered organic conductor (ET)4ZnBr4(1,2-C6H4Cl2) above room temperature show abrupt changes in resistivity at 320 K. Single-crystal X-ray diffraction studies in the 100-350 K range...

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A quantitative analysis of room temperature recrystallization kinetics in electroplated copper films using high resolution x-ray diffraction

Journal of Applied Physics ◽

10.1063/1.3514096 ◽

2011 ◽

Vol 109 (1) ◽

pp. 014907 ◽

Cited By ~ 11

Author(s):

Andrew Ying ◽

Christian Witt ◽

Jean Jordan-Sweet ◽

Robert Rosenberg ◽

I. C. Noyan

Keyword(s):

Quantitative Analysis ◽

High Resolution ◽

Room Temperature ◽

Copper Films ◽

X Ray Diffraction ◽

X Ray ◽

Recrystallization Kinetics ◽

Electroplated Copper

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Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.305-306.33 ◽

2010 ◽

Vol 305-306 ◽

pp. 33-37 ◽

Cited By ~ 1

Author(s):

S. Lallouche ◽

M.Y. Debili

Keyword(s):

Thin Films ◽

Copper Content ◽

Room Temperature ◽

Structural Features ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Transmission Electron ◽

Hall Method

This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

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Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.320.150 ◽

2013 ◽

Vol 320 ◽

pp. 150-154

Author(s):

Hao Ren ◽

Qun Zeng ◽

Xi Hui Liang

Keyword(s):

Thin Films ◽

Electron Beam ◽

Room Temperature ◽

Electron Beam Evaporation ◽

Photoluminescence Spectra ◽

X Ray Diffraction ◽

X Ray ◽

Surface Morphologies ◽

Ingaas Detector

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

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EFFECT OF γ RADIATION ON SOME PHYSICAL PROPERTIES OF THE SPINEL FERRITE SYSTEM Ni0.65Zn0.35CuxFe2−xO4

Modern Physics Letters B ◽

10.1142/s0217984994001692 ◽

1994 ◽

Vol 08 (28) ◽

pp. 1781-1790 ◽

Cited By ~ 3

Author(s):

F.S. TERRA

Keyword(s):

Electrical Resistivity ◽

Room Temperature ◽

Spinel Ferrite ◽

Lattice Parameter ◽

X Ray Diffraction ◽

Γ Radiation ◽

X Ray ◽

Resistivity Measurements ◽

Dta Analysis ◽

Ferrite System

X-ray diffraction analysis, electrical resistivity measurements at room temperature, and differential thermal analysis (DTA) were carried out for γ-irradiated Ni 0.65 Zn 0.35 Cu xFe2−x O 4 spinel ferrite samples. It was found that the lattice parameter decreased, i.e. the theoretical density increased, while the electrical resistivity decreased. From the DTA analysis there is an endothermic peak at 100–130º C due to internal stress created by γ radiations as a result of lattice defects formation.

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Characterization of Rutile N-Doped TiO2 Films Prepared by RF Magnetron Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.543.277 ◽

2013 ◽

Vol 543 ◽

pp. 277-280

Author(s):

Marius Dobromir ◽

Alina Vasilica Manole ◽

Simina Rebegea ◽

Radu Apetrei ◽

Maria Neagu ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Rutile Phase ◽

X Ray Diffraction ◽

X Ray ◽

Deposited Films

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.

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Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽

10.3390/ma14133502 ◽

2021 ◽

Vol 14 (13) ◽

pp. 3502

Author(s):

Fangzhou Song ◽

Masayoshi Uematsu ◽

Takeshi Yabutsuka ◽

Takeshi Yao ◽

Shigeomi Takai

Keyword(s):

Room Temperature ◽

Conduction Mechanism ◽

Lithium Ion ◽

X Ray Diffraction ◽

Temperature Conductivity ◽

Room Temperature Conductivity ◽

X Ray ◽

Nano Powder ◽

Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

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MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004580 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 412-424

Author(s):

Jung Han ◽

Jeffrey J. Figiel ◽

Gary A. Petersen ◽

Samuel M. Myers ◽

Mary H. Crawford ◽

...

Keyword(s):

Room Temperature ◽

Rutherford Backscattering Spectrometry ◽

Optoelectronic Devices ◽

Lattice Parameter ◽

X Ray Diffraction ◽

X Ray ◽

Peak Energy ◽

Movpe Growth ◽

Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

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Structure and Conductivity of Iodine-Doped C60 Thin Films

MRS Proceedings ◽

10.1557/proc-359-443 ◽

1994 ◽

Vol 359 ◽

Cited By ~ 1

Author(s):

Jun Chen ◽

Haiyan Zhang ◽

Baoqiong Chen ◽

Shaoqi Peng ◽

Ning Ke ◽

...

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Room Temperature ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

Temperature Conductivity ◽

Room Temperature Conductivity ◽

X Ray ◽

Thermally Activated ◽

Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

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