YBa2Cu3O7−x Thin Film Growth on Single Crystal and Polycrystalline Yttria-Stabilized Zirconia

1990 ◽  
pp. 157-165
Author(s):  
David P. Norton ◽  
Douglas H. Lowndes ◽  
D. K. Christen ◽  
E. C. Jones ◽  
J. D. Budai ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Yttria Stabilized Zirconia ◽  
Thin Film Growth ◽  
Stabilized Zirconia

Biaxially-Textured YBa2Cu3O7–x Thin Film Growth on Polycrystalline and Amorphous Substrates Using Ion Assisted Laser Deposition of Yttria-Stabilized Zirconia Intermediate Layers

1992 ◽  
Vol 285 ◽  
Author(s):  
R. P. Reade ◽  
P. Berdahl ◽  
R. E. Russo ◽  
S. M. Garrison
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Incident Angle ◽  
Ion Beam ◽  
Yttria Stabilized Zirconia ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Stabilized Zirconia ◽  
Polycrystalline Alumina ◽  
Intermediate Layers

ABSTRACTThe growth of (001)-textured, biaxially-aligned yttria-stabilized zirconia (YSZ) intermediate layers on amorphous or randomly-oriented polycrystalline substrates is desirable for subsequent YBa2Cu3O7–x (YBCO) c-axis thin film growth. Laser deposition of YSZ on polycrystalline metal substrates (Haynes Alloy #230) in 1.0 millitorr oxygen at 70°C produces partial (001) texture but no alignment of in-plane axes. Highly-textured biaxially-aligned layers are obtained by using an ion beam to assist growth. Similar layers are obtained on amorphous silica and polycrystalline alumina substrates. The effects of ion-beam parameters including incident angle, source gas, and beam voltage and current are presented. Highly c-axis-oriented, biaxiallyaligned YBCO thin films have been deposited in situ on these YSZ layers, with Tc(R=0) ∼ 92K and Jc(77K) = 6 × 105 A/cm2. Angular magnetoresistance data shows a dip in resistance with magnetic field normal to the film, in contrast to films grown epitaxially on single crystal substrates, which have maximum resistance with field normal.

Thin film growth of yttria stabilized zirconia by aerosol assisted chemical vapor deposition

2012 ◽  
Vol 202 ◽  
pp. 47-55 ◽  
Author(s):  
M.V.F. Schlupp ◽  
M. Prestat ◽  
J. Martynczuk ◽  
J.L.M. Rupp ◽  
A. Bieberle-Hütter ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Thin Film Growth ◽  
Stabilized Zirconia

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth

Study of Photo-Induced Thin Film Growth on Cds Substrates.*

1983 ◽  
Vol 29 ◽  
Author(s):  
C. Arnone ◽  
C. Call' ◽  
S. Riva-Sanseverino
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Single Crystal ◽  
Absorption Edge ◽  
Film Growth ◽  
Thin Film Growth ◽  
Amorphous Thin Film ◽  
Maximum Light

ABSTRACTPhoto-induced growth of ZnS on CdS has been studied using amorphous (thin film) and single-crystal substrates. The effect has been found to occur for light of wavelength shorter than the CdS absorption edge; a maximum light-induced thickness enhancement of 700 Å has been obtained for the ZnS film, with a growth rate of 2000 Å/min. The lightinduced growth, with its observed “memory” of several minutes is consistent with photo-desorption of an adlayer.

Ion Thinning of Electron Transparent Single Crystal Sapphire Substrates

1974 ◽  
Vol 32 ◽  
pp. 468-469
Author(s):  
J. L. Kenty ◽  
R. E. Johnson
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Sapphire Substrates ◽  
Single Crystal Sapphire ◽  
Growth Experiments

Samples of single crystal sapphire (α-Al2O3) have been ion-beam thinned to yield electron transparent regions suitable for use as substrates for in situ thin film growth experiments. Routine fabrication of 1 mm dia. samples containing one or more thin (∼200Å) regions ∼10μm2 in area was possible. The samples were surprisingly robust, many surviving post-thinning subdivision, mounting into a TEM environment cell, and heating to ∼1200°C.

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