Al–Sn co-doped ZnO thin films were fabricated onto quartz glass substrates by the sol-gel method. The surface morphology, electrical and optical properties at different post-deposition heating temperatures were investigated. The grains of preferred c-axis showed a well-mixed microstructure and the peak height was enhanced with the post-deposition heating temperature increasing from 400°C to 600°C. Doped films showed a preferential orientation along the (002) plane, while the preferential orientation changed to the (101) plane when temperature was higher than 500°C. The lowest resistivity 6×10–3Ω•cm was observed from samples made at 500°C, with an average 91.2% optical transmittance in the visible range. In this study, optical band gap of all the doped films were broadened, regardless of post–deposition heating temperature.
Optical, Structural, and Crystal Defects Characterizations of Dip Synthesized (Fe-Ni) Co-Doped ZnO Thin Films