Ionization potential and electron attenuation length of titanium dioxide deposited by atomic layer deposition determined by photoelectron spectroscopy in air

2017 ◽  
Vol 422 ◽  
pp. 504-508 ◽  
Author(s):  
Francisco C. Marques ◽  
Jacek J. Jasieniak
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Ionization Potential ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Attenuation Length ◽  
Layer Deposition

scholarly journals Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition

2021 ◽  
pp. 138758
Author(s):  
Oili M.E. Ylivaara ◽  
Andreas Langner ◽  
Xuwen Liu ◽  
Dieter Schneider ◽  
Jaakko Julin ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Titanium Tetrachloride ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of titanium dioxide thin films from tetraethoxytitanium and water

2010 ◽  
Vol 4 (3) ◽  
pp. 379-383 ◽  
Author(s):  
A. P. Alekhin ◽  
G. I. Lapushkin ◽  
A. M. Markeev ◽  
A. A. Sigarev ◽  
V. F. Toknova
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide

2014 ◽  
Vol 26 (2) ◽  
pp. 024003 ◽  
Author(s):  
Stephan Ratzsch ◽  
Ernst-Bernhard Kley ◽  
Andreas Tünnermann ◽  
Adriana Szeghalmi
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Plasma Parameters ◽  
Layer Deposition

scholarly journals Novel Antimicrobial Titanium Dioxide Nanotubes Obtained through a Combination of Atomic Layer Deposition and Electrospinning Technologies

Nanomaterials ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 128 ◽  
Author(s):  
Carol López de Dicastillo ◽  
Cristian Patiño ◽  
María Galotto ◽  
Juan Palma ◽  
Daniela Alburquenque ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Dioxide Nanotubes ◽  
Layer Deposition

scholarly journals Dispersion Characteristics of α-Fe2O3 Nanopowders Coated with Titanium Dioxide by Atomic Layer Deposition

2017 ◽  
Vol 54 (2) ◽  
pp. 137-140 ◽  
Author(s):  
Hae Ryul Ok ◽  
Bo Kyung Lee ◽  
Hye Jin Bae ◽  
Hyug Jong Kim ◽  
Byung Ho Choi
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dispersion Characteristics ◽  
Layer Deposition

scholarly journals Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

2007 ◽  
Vol 996 ◽  
Author(s):  
Justin C. Hackley ◽  
J. Derek Demaree ◽  
Theodosia Gougousi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Flow Reactor ◽  
Atomic Layer ◽  
Sample Surface ◽  
Interfacial Region ◽  
Initial Growth ◽  
Layer Deposition ◽  
Similar Growth

AbstractA hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited on H-terminated Si and SC1 chemical oxide starting surfaces. Spectroscopic ellipsometry (SE) and QCM measurements confirm linear growth of the films at a substrate temperature of 275°C. FTIR spectra indicate the films are amorphous as-deposited. Two distinct growth regimes are observed: from 1-50 cycles, both surfaces display similar growth rates of about 1.0Å/cycle; from 50-200 cycles, HfO2 growth is decreased by about 15% to ~0.87Å/cycle on both surfaces. Nucleation and initial growth behavior of the films on Si-H were examined using X-ray photoelectron spectroscopy (XPS). Angle-resolved XPS, at take-off angles of θ=0, 15, 30, 45 and 60° measured from the normal to the sample surface, is used to probe the interfacial region of thin films (4, 7, 10, 15 and 25 cycles) on H-terminated samples. Initially, an interfacial layer comprised of a SiOx/HfSiOx mixture is grown between 1-10 ALD cycles. We observe that the Si/HfO2 interface is unstable, and oxidation continues up to the 25th ALD cycle, reaching a thickness of ~18Å.

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