X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect

2016 ◽  
Vol 8 (2) ◽  
pp. 336-341 ◽  
Author(s):  
Woon-Seop Choi
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Annealing Effect ◽  
X Ray ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films

Atomic layer deposition of titanium dioxide thin films from tetraethoxytitanium and water

2010 ◽  
Vol 4 (3) ◽  
pp. 379-383 ◽  
Author(s):  
A. P. Alekhin ◽  
G. I. Lapushkin ◽  
A. M. Markeev ◽  
A. A. Sigarev ◽  
V. F. Toknova
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films

scholarly journals Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

2019 ◽  
Vol 10 ◽  
pp. 1443-1451
Author(s):  
Ivan Kundrata ◽  
Karol Fröhlich ◽  
Lubomír Vančo ◽  
Matej Mičušík ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Area ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Lithium Hydride ◽  
X Ray ◽  
Layer Deposition

Lithiated thin films are necessary for the fabrication of novel solid-state batteries, including the electrodes and solid electrolytes. Physical vapour deposition and chemical vapour deposition can be used to deposit lithiated films. However, the issue of conformality on non-planar substrates with large surface area makes them impractical for nanobatteries the capacity of which scales with surface area. Atomic layer deposition (ALD) avoids these issues and is able to deposit conformal films on 3D substrates. However, ALD is limited in the range of chemical reactions, due to the required volatility of the precursors. Moreover, relatively high temperatures are necessary (above 100 °C), which can be detrimental to electrode layers and substrates, for example to silicon into which the lithium can easily diffuse. In addition, several highly reactive precursors, such as Grignard reagents or n-butyllithium (BuLi) are only usable in solution. In theory, it is possible to use BuLi and water in solution to produce thin films of LiH. This theoretical reaction is self-saturating and, therefore, follows the principles of solution atomic layer deposition (sALD). Therefore, in this work the sALD technique and principles have been employed to experimentally prove the possibility of LiH deposition. The formation of homogeneous air-sensitive thin films, characterized by using ellipsometry, grazing incidence X-ray diffraction (GIXRD), in situ quartz crystal microbalance, and scanning electron microscopy, was observed. Lithium hydride diffraction peaks have been observed in as-deposited films by GIXRD. X-ray photoelectron spectroscopy and Auger spectroscopy analysis show the chemical identity of the decomposing air-sensitive films. Despite the air sensitivity of BuLi and LiH, making many standard measurements difficult, this work establishes the use of sALD to deposit LiH, a material inaccessible to conventional ALD, from precursors and at temperatures not suitable for conventional ALD.

Atomic Layer Deposition of Titanium Dioxide Thin Films from Cp*Ti(OMe)3 and Ozone

2009 ◽  
Vol 113 (52) ◽  
pp. 21825-21830 ◽  
Author(s):  
Martin Rose ◽  
Jaakko Niinistö ◽  
Pawel Michalowski ◽  
Lukas Gerlich ◽  
Lutz Wilde ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films ◽  
Cp Ti

scholarly journals Plasma Enhanced Atomic Layer Deposition of Tantalum (V) Oxide

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1206
Author(s):  
Pavel Fedorov ◽  
Denis Nazarov ◽  
Oleg Medvedev ◽  
Yury Koshtyal ◽  
Aleksander Rumyantsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Protective Coatings ◽  
Lithium Ion ◽  
Atomic Layer ◽  
Evaporator Temperature ◽  
Current Increase ◽  
X Ray ◽  
Layer Deposition

The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit high quality films and coatings with excellent uniformity and conformality. Tantalum (V) ethoxide (Ta(OEt)5) and remote oxygen plasma were used as tantalum-containing reagent and oxidizing co-reagent, respectively. The influence of deposition parameters (reactor and evaporator temperature, pulse and purge times) on the growth rate were studied. The thickness of the films were measured by spectroscopic ellipsometry, scanning electron microscopy and X-ray reflectometry. The temperature range of the ALD window was 250–300 °C, the growth per cycle was about 0.05 nm/cycle. Different morphology of films deposited on silicon and stainless steel was found. According to the X-ray diffraction data, the as-prepared films were amorphous. But the heat treatment study shows crystallization at 800 °C with the formation of the polycrystalline Ta2O5 phase with a rhombic structural type (Pmm2). The results of the X-ray reflectometry show the Ta-O films’ density is 7.98 g/cm3, which is close to the density of crystalline Ta2O5 of the rhombic structure (8.18 g/cm3). The obtained thin films have a low roughness and high uniformity. The chemical composition of the surface and bulk of Ta-O coatings was studied by X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy. Surface of the films contain Ta2O5 and some carbon contamination, but the bulk of the films does not contain carbon and any precursor residues. Cyclic voltammetry (CVA) showed that there is no current increase for tantalum (V) oxide in a potential window of 3–4.2 V and has prospects of use as protective coatings for cathode materials of SSLIBs.

scholarly journals Titanium dioxide thin films by atomic layer deposition: a review

2017 ◽  
Vol 32 (9) ◽  
pp. 093005 ◽  
Author(s):  
Janne-Petteri Niemelä ◽  
Giovanni Marin ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films

Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles

2010 ◽  
Vol 257 (1) ◽  
pp. 186-191 ◽  
Author(s):  
A.P. Alekhin ◽  
S.A. Gudkova ◽  
A.M. Markeev ◽  
A.S. Mitiaev ◽  
A.A. Sigarev ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Structural Properties ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films ◽  
Reaction Cycles

Titanium Dioxide Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition for OLED Passivation

2008 ◽  
Vol 8 (9) ◽  
pp. 4726-4729 ◽  
Author(s):  
Woong-Sun Kim ◽  
Myoung-Gyun Ko ◽  
Tae-Sub Kim ◽  
Sang-Kyun Park ◽  
Yeon-Keon Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Transmission Rate ◽  
Atomic Layer ◽  
Titanium Dioxide Film ◽  
Uncoated Sample ◽  
Layer Deposition ◽  
Titanium Dioxide Thin Films ◽  
Dioxide Film

Plasma enhanced atomic layer deposition (PEALD) of titanium dioxide thin films was conducted using Tetrakis dimethylamino titanium (TDMATi) and an oxygen plasma on a polyethersulfon (PES) substrate at a deposition temperature of 90 °C. The effects of the induced plasma power on passivation properties were investigated according to film thickness. The growth rate of the titanium dioxide film was 0.8 Å/cycle, and the water vapor transmission rate (WTVR) for a 80 nm titanium dioxide film was 0.023 g/m2·day. The passivation performance of the titanium dioxide film was investigated using an organic light-emitting diode (OLED). The coated OLED lifetime was 90 h, 15 times longer than that of an uncoated sample.

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

scholarly journals Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

2007 ◽  
Vol 996 ◽  
Author(s):  
Justin C. Hackley ◽  
J. Derek Demaree ◽  
Theodosia Gougousi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Flow Reactor ◽  
Atomic Layer ◽  
Sample Surface ◽  
Interfacial Region ◽  
Initial Growth ◽  
Layer Deposition ◽  
Similar Growth

AbstractA hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited on H-terminated Si and SC1 chemical oxide starting surfaces. Spectroscopic ellipsometry (SE) and QCM measurements confirm linear growth of the films at a substrate temperature of 275°C. FTIR spectra indicate the films are amorphous as-deposited. Two distinct growth regimes are observed: from 1-50 cycles, both surfaces display similar growth rates of about 1.0Å/cycle; from 50-200 cycles, HfO2 growth is decreased by about 15% to ~0.87Å/cycle on both surfaces. Nucleation and initial growth behavior of the films on Si-H were examined using X-ray photoelectron spectroscopy (XPS). Angle-resolved XPS, at take-off angles of θ=0, 15, 30, 45 and 60° measured from the normal to the sample surface, is used to probe the interfacial region of thin films (4, 7, 10, 15 and 25 cycles) on H-terminated samples. Initially, an interfacial layer comprised of a SiOx/HfSiOx mixture is grown between 1-10 ALD cycles. We observe that the Si/HfO2 interface is unstable, and oxidation continues up to the 25th ALD cycle, reaching a thickness of ~18Å.

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