Thein situPES – Ar GCIB sputtering combined analysis enable to characterize the persistence of controlled energy-level at organic semiconductor/electrode interfaces.
We propose a novel, direct diagnosis method for graphene doping states at organic semiconductor/electrode interfaces by an in situ photoemission spectroscopy method.
Correction for ‘Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering’ by Dong-Jin Yun et al., Phys. Chem. Chem. Phys., 2018, 20, 615–622.