Tuning the photocatalytic activity of TiO2 nanoparticles by ultrathin SiO2 films grown by low-temperature atmospheric pressure atomic layer deposition

2020 ◽  
Vol 530 ◽  
pp. 147244 ◽  
Author(s):  
Jing Guo ◽  
Dominik Benz ◽  
Thao-Trang Doan Nguyen ◽  
Phuc-Huy Nguyen ◽  
Thanh-Lieu Thi Le ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Tio2 Nanoparticles ◽  
Atmospheric Pressure ◽  
Atomic Layer ◽  
Sio2 Films ◽  
Layer Deposition

Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors

2007 ◽  
Vol 124-126 ◽  
pp. 247-250 ◽  
Author(s):  
Won Jun Lee ◽  
Min Ho Chun ◽  
Kwang Su Cheong ◽  
Kwang Chol Park ◽  
Chong Ook Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Sio2 Films ◽  
Layer Deposition ◽  
Better Than

SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.

scholarly journals Low temperature temporal and spatial atomic layer deposition of TiO2 films

2015 ◽  
Vol 33 (4) ◽  
pp. 041512 ◽  
Author(s):  
Morteza Aghaee ◽  
Philipp S. Maydannik ◽  
Petri Johansson ◽  
Jurkka Kuusipalo ◽  
Mariadriana Creatore ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Layer Deposition ◽  
Temporal And Spatial
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