In-plane polarization contribution to the vertical piezoresponse force microscopy signal mediated by the cantilever “buckling”

AbstractInvestigation of crystal structure, magnetic and local ferroelectric properties of the diamagnetically-doped Bi1−xAxFeO3 (A= Ca, Sr, Pb, Ba; x= 0.2, 0.3) ceramic samples has been carried out. It has been shown that the solid solutions have a rhombohedrally distorted perovskite structure described by the space group R3c. Piezoresponse force microscopy data have revealed the existence of the spontaneous ferroelectric polarization in the samples at room temperature. Magnetization measurements have shown that the magnetic state of these compounds is determined by the ionic radius of the substituting elements. A-site substitution with the biggest ionic radius ions has been found to suppress the spiral spin structure of BiFeO3 and to result in the appearance of weak ferromagnetism. The magnetic properties have been discussed in terms of doping- induced changes in the magnetic anisotropy.

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Mapping nanoscale domain patterns in ferroelectric ceramics by atomic force acoustic microscopy and piezoresponse force microscopy

Journal of Applied Physics ◽

10.1063/1.4801976 ◽

2013 ◽

Vol 113 (18) ◽

pp. 187214 ◽

Cited By ~ 9

Author(s):

X. L. Zhou ◽

F. X. Li ◽

H. R. Zeng

Keyword(s):

Piezoresponse Force Microscopy ◽

Acoustic Microscopy ◽

Ferroelectric Ceramics ◽

Force Microscopy ◽

Atomic Force

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Piezoresponse force microscopy (PFM) characterization of GaN nanowires grown by Plasma assisted Molecular beam epitaxy (PA-MBE)

2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM) ◽

10.1109/isaf.2016.7578091 ◽

2016 ◽

Author(s):

Nikhilendu Tiwary ◽

Ritam Sarkar ◽

V. Ramgopal Rao ◽

Apurba Laha

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Piezoresponse Force Microscopy ◽

Force Microscopy ◽

Gan Nanowires

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Three-dimensional ferroelectric domain imaging of epitaxial BiFeO3 thin films using angle-resolved piezoresponse force microscopy

Applied Physics Letters ◽

10.1063/1.3487933 ◽

2010 ◽

Vol 97 (11) ◽

pp. 112907 ◽

Cited By ~ 44

Author(s):

Moonkyu Park ◽

Seungbum Hong ◽

Jeffrey A. Klug ◽

Michael J. Bedzyk ◽

Orlando Auciello ◽

...

Keyword(s):

Thin Films ◽

Three Dimensional ◽

Piezoresponse Force Microscopy ◽

Ferroelectric Domain ◽

Force Microscopy ◽

Bifeo3 Thin Films

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Biological Ferroelectricity Uncovered in Aortic Walls by Piezoresponse Force Microscopy

Physical Review Letters ◽

10.1103/physrevlett.108.078103 ◽

2012 ◽

Vol 108 (7) ◽

Cited By ~ 117

Author(s):

Yuanming Liu ◽

Yanhang Zhang ◽

Ming-Jay Chow ◽

Qian Nataly Chen ◽

Jiangyu Li

Keyword(s):

Piezoresponse Force Microscopy ◽

Force Microscopy

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Retention loss in the ferroelectric (SrBi 2 Ta 2 O 9 )-insulator (HfO 2 )-silicon structure studied by piezoresponse force microscopy

EPL (Europhysics Letters) ◽

10.1209/0295-5075/98/27011 ◽

2012 ◽

Vol 98 (2) ◽

pp. 27011 ◽

Cited By ~ 3

Author(s):

Z. H. Zhang ◽

X. L. Zhong ◽

Y. Zhang ◽

J. B. Wang ◽

C. J. Lu ◽

...

Keyword(s):

Piezoresponse Force Microscopy ◽

Silicon Structure ◽

Force Microscopy ◽

Retention Loss

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Effect of oxidizing and reducing atmospheres on Ba(Ti0.90 Zr0.10)o3:2V ceramics as characterized by piezoresponse force microscopy

Processing and Application of Ceramics ◽

10.2298/pac1103139m ◽

2011 ◽

Vol 5 (3) ◽

pp. 139-147 ◽

Cited By ~ 1

Author(s):

Francisco Moura ◽

Alexandre Simões ◽

Carla Riccardi ◽

Maria Zaghete ◽

Jose Varela ◽

...

Keyword(s):

Data Storage ◽

Photoelectron Spectroscopy ◽

Ferroelectric Properties ◽

Piezoresponse Force Microscopy ◽

Nitrogen Atmosphere ◽

Ambient Atmosphere ◽

Practical Applications ◽

Force Microscopy ◽

Storage Media ◽

Piezoelectric Force Microscopy

The effect of annealing atmospheres (Atamb, N2 and O2) on the electrical properties of Ba(Ti0.90Zr0.10 )O3:2V (BZT10:2V) ceramics obtained by the mixed oxide method was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicates that oxygen vacancies present near Zr and Ti ions reduce ferroelectric properties, especially in samples treated in an ambient atmosphere (Atamb ). BZT10:2V ceramics sintered in a nitrogen atmosphere showed better dielectric behaviour at room temperature with a dielectric permittivity measured at a frequency of 10 kHz equal to 16800 with dielectric loss of 0.023. Piezoelectric force microscopy (PFM) images reveal improvement in the piezoelectric coefficient by sintering the sample under nitrogen atmosphere. Thus, BZT10:2V ceramics sintered under a nitrogen atmosphere can be useful for practical applications which include nonvolatile digital memories, spintronics and data-storage media.

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