Mapping nanoscale domain patterns in ferroelectric ceramics by atomic force acoustic microscopy and piezoresponse force microscopy

2013 ◽  
Vol 113 (18) ◽  
pp. 187214 ◽  
Author(s):  
X. L. Zhou ◽  
F. X. Li ◽  
H. R. Zeng
Keyword(s):  
Piezoresponse Force Microscopy ◽  
Acoustic Microscopy ◽  
Ferroelectric Ceramics ◽  
Force Microscopy ◽  
Atomic Force

Surface displacements and surface charges on Ba2CuWO6 and Ba2Cu0.5Zn0.5WO6 ceramics induced by local electric fields investigated with scanning-probe microscopy

2007 ◽  
Vol 22 (1) ◽  
pp. 193-200
Author(s):  
Ralf-Peter Herber ◽  
Gerold A. Schneider
Keyword(s):  
Electric Fields ◽  
Ferroelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Material ◽  
Relaxor Ferroelectrics ◽  
Surface Charges ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Displacements

Ba2CuWO6 (BCW) was first synthesized in the mid 1960s, and it was predicted to be a ferroelectric material with a very high Curie temperature of 1200 °C [N. Venevtsev and A.G. Kapyshev: New ferroelectrics. Proc. Int. Meet. Ferroelectr.1, 261 (1966)]. Since then, crystallographic studies were performed on the compound with the result that its crystal structure is centrosymmetric. Thus for principal reason, BCW cannot be ferroelectric. That obvious contradiction was examined in this study. Disk-shaped ceramic samples of BCW and Ba2Cu0.5Zn0.5WO6 (BCZW) were prepared. Because of the low electrical resistivity of the ceramics, it was not possible to perform a typical polariszation hysteresis loop for characterization of ferroelectric properties. Scanning electron microscopy investigations strongly suggest that the reason for the conductivity is found in the impurities/precipitations within the microstructure of the samples. With atomic force microscopy (AFM) in piezoresponse force microscopy (PFM) mode, it is possible to characterize local piezoelectricity by imaging the ferroelectric domains. Neither BCW nor BCZW showed any domain structure. Nevertheless, when local electric fields were applied to the surfaces of the ceramics topographic displacements, imaged with AFM, and surface charges, imaged with Kelvin probe force microscopy (KFM) and PFM, were measured and remained stable on the surface for the time of the experiment. Therefore BCW and BCZW are considered to be electrets and possibly relaxor ferroelectrics.

scholarly journals Structure-resistive property relationships in thin ferroelectric BaTiO$$_{3}$$ films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
N. V. Andreeva ◽  
A. Petraru ◽  
O. Yu. Vilkov ◽  
A. E. Petukhov
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Ferroelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Ferroelectric Films ◽  
Force Microscopy ◽  
Atomic Force

Abstract A combined study of local structural, electric and ferroelectric properties of SrTiO$$_{3}$$ 3 /La$$_{0.7}$$ 0.7 Sr$$_{0.3}$$ 0.3 MnO$$_{3}$$ 3 /BaTiO$$_{3}$$ 3 heterostructures was performed by Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy in the temperature range 30–295 K. The direct correlation of film structure (epitaxial, nanocrystalline or polycrystalline) with local electric and ferroelectric properties was observed. For polycrystalline ferroelectric films the predominant polarization state is defined by the peculiarity of screening the built-in field by positively charged point defects. Based on Scanning Tunneling Spectroscopy results, it was found that a sequent voltage application provokes the modification of local resistive properties related to the redistribution of point defects in thin ferroelectric films. A qualitative analysis of acquired Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy images together with Scanning Tunneling Spectroscopy measurements enabled us to conclude that in the presence of structural defects the competing processes of electron injection, trap filling and the drift of positively charged point defects drives the change of resistive properties of thin films under applied electric field. In this paper, we propose a new approach based on Scanning Tunneling Microscopy/Spectroscopy under ultrahigh vacuum conditions to clarify the influence of point defects on local resistive properties of nanometer-thick ferroelectric films.

scholarly journals Investigations of ferroelectric polycrystalline bulks and thick films using piezoresponse force microscopy

2019 ◽  
Vol 475 (2223) ◽  
pp. 20180782 ◽  
Author(s):  
Hana Uršič ◽  
Uroš Prah
Keyword(s):  
Domain Walls ◽  
Thick Films ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Domain Structures ◽  
Atomic Force ◽  
Ferroelectric Domain Structure ◽  
Converse Piezoelectric Effect ◽  
Non Destructive

In recent years, ferroelectric/piezoelectric polycrystalline bulks and thick films have been extensively studied for different applications, such as sensors, actuators, transducers and caloric devices. In the majority of these applications, the electric field is applied to the working element in order to induce an electromechanical response, which is a complex phenomenon with several origins. Among them is the field-induced movement of domain walls, which is nowadays extensively studied using piezoresponse force microscopy (PFM), a technique derived from atomic force microscopy. PFM is based on the detection of the local converse piezoelectric effect in the sample; it is one of the most frequently applied methods for the characterization of the ferroelectric domain structure due to the simplicity of the sample preparation, its non-destructive nature and its relatively high imaging resolution. In this review, we focus on the PFM analysis of ferroelectric bulk ceramics and thick films. The core of the paper is divided into four sections: (i) introduction; (ii) the preparation of the samples prior to the PFM investigation; (iii) this is followed by reviews of the domain structures in polycrystalline bulks; and (iv) thick films.

scholarly journals Cantilever signature of tip detachment during contact resonance AFM

2021 ◽  
Vol 12 ◽  
pp. 1286-1296
Author(s):  
Devin Kalafut ◽  
Ryan Wagner ◽  
Maria Jose Cadena ◽  
Anil Bajaj ◽  
Arvind Raman
Keyword(s):  
Atomic Force Microscopy ◽  
Numerical Simulations ◽  
Piezoresponse Force Microscopy ◽  
Average Force ◽  
Standard Equipment ◽  
Vibrational Signal ◽  
Essential Condition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Contact Resonance

Contact resonance atomic force microscopy, piezoresponse force microscopy, and electrochemical strain microscopy are atomic force microscopy modes in which the cantilever is held in contact with the sample at a constant average force while monitoring the cantilever motion under the influence of a small, superimposed vibrational signal. Though these modes depend on permanent contact, there is a lack of detailed analysis on how the cantilever motion evolves when this essential condition is violated. This is not an uncommon occurrence since higher operating amplitudes tend to yield better signal-to-noise ratio, so users may inadvertently reduce their experimental accuracy by inducing tip–sample detachment in an effort to improve their measurements. We shed light on this issue by deliberately pushing both our experimental equipment and numerical simulations to the point of tip–sample detachment to explore cantilever dynamics during a useful and observable threshold feature in the measured response. Numerical simulations of the analytical model allow for extended insight into cantilever dynamics such as full-length deflection and slope behavior, which can be challenging or unobtainable in a standard equipment configuration. With such tools, we are able to determine the cantilever motion during detachment and connect the qualitative and quantitative behavior to experimental features.

Structure and Properties of Thin Films Consisting of Single Crystalline BaTiO3 Nanocubes

2013 ◽  
Vol 582 ◽  
pp. 149-152 ◽  
Author(s):  
Kenichi Mimura ◽  
Kazumi Kato
Keyword(s):  
Hydrothermal Reaction ◽  
Piezoresponse Force Microscopy ◽  
Dip Coating ◽  
Structure And Properties ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coating Method ◽  
Dip Coating Method ◽  
Ferroelectric Hysteresis

Single crystalline BaTiO3nanocubes, which were synthesized by hydrothermal reaction with organic surfactants and additives, were assembled in order and directly on the substrates by dip-coating method using the dispersed solution. After evaporation of solvent, the orderly assembly of the nanocubes was developed over the large region in about several tens of micrometers square. It can cover whole surface of the substrate. The microstructures of the nanocube assemblies were evaluated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrical property of the nanocube-assembled film was characterized by piezoresponse force microscopy (PFM). The d33-V curve showed ferroelectric hysteresis and saturation behaviors under high applied voltage.

scholarly journals Micro-Area Ferroelectric, Piezoelectric and Conductive Properties of Single BiFeO3 Nanowire by Scanning Probe Microscopy

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 190 ◽  
Author(s):  
Shenglan Wu ◽  
Jing Zhang ◽  
Xiaoyan Liu ◽  
Siyi Lv ◽  
Rongli Gao ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Bismuth Ferrite ◽  
Piezoresponse Force Microscopy ◽  
Scanning Probe ◽  
Switching Behavior ◽  
X Ray Diffraction ◽  
Probe Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Conductive Properties

Ferroelectric nanowires have attracted great attention due to their excellent physical properties. We report the domain structure, ferroelectric, piezoelectric, and conductive properties of bismuth ferrite (BFO, short for BiFeO3) nanowires characterized by scanning probe microscopy (SPM). The X-ray diffraction (XRD) pattern presents single phase BFO without other obvious impurities. The piezoresponse force microscopy (PFM) results indicate that the nanowires possess a multidomain configuration, and the maximum piezoelectric coefficient (d33) of single BFO nanowire is 22.21 pm/V. Poling experiments and local switching spectroscopy piezoresponse force microscopy (SS-PFM) demonstrate that there is sufficient polarization switching behavior and obvious piezoelectric properties in BFO nanowires. The conducting atomic force microscopy (C-AFM) results show that the current is just hundreds of pA at 8 V. These lay the foundation for the application of BFO nanowires in nanodevices.

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