Nitrogen vacancy and hydrogen substitution mediated tunable optoelectronic properties of g-C3N4 2D layered structures: Applications towards blue LED to broad-band photodetection

2021 ◽  
Vol 556 ◽  
pp. 149773
Author(s):  
Arnab Ghosh ◽  
Himanshu Saini ◽  
Arijit Sarkar ◽  
Puspendu Guha ◽  
Aneeya K. Samantara ◽  
...  
Keyword(s):  
Broad Band ◽  
Layered Structures ◽  
Optoelectronic Properties ◽  
Nitrogen Vacancy ◽  
Blue Led ◽  
Hydrogen Substitution

Construction of Band Profiles for Semiconductor Heterojunctions and Layered Structures

1992 ◽  
Vol 260 ◽  
Author(s):  
J. W. Garland ◽  
L. Kassel ◽  
D. Yang ◽  
Z. Zhang ◽  
P. M. Raccah
Keyword(s):  
Sample Surface ◽  
Layered Structures ◽  
Optoelectronic Properties ◽  
Semiconductor Heterostructures ◽  
Localized States ◽  
Band Offsets ◽  
Transport Measurements ◽  
Band Profile ◽  
Semiconductor Heterojunctions

ABSTRACTBand profiles specify the position of all band edges as a function of distance from a sample surface or interface. They largely determine the electrical and optoelectronic properties of semiconductor heterostructures. Neither theory nor standard transport measurements alone have been able to give reliable values for band offsets, much less entire band profiles. However, the use of electroreflectance, which reveals crossover transitions between localized states or band edges present on opposite sides of an interface, and which allows us to measure accurately built-in fields, has allowed us to determine accurate band profiles for several types of semiconductor heterostructures. The procedure used to find the band profile is elucidated in detail for two technologically important cases.

scholarly journals Two-Dimensional Halide Perovskites: Synthesis, Optoelectronic Properties, Stability, and Applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Sushant Ghimire ◽  
Christian Klinke
Keyword(s):  
Light Harvesting ◽  
Layered Structures ◽  
Optoelectronic Properties ◽  
Two Dimensional ◽  
Light Emitting ◽  
Halide Perovskites

Halide perovskites are promising materials for light-emitting and light-harvesting applications. In this context, two-dimensional perovskites such as nanoplatelets or Ruddlesden-Popper and Dion-Jacobson layered structures are important because of their structural...

A high efficiency broad-band near-infrared Ca2LuZr2Al3O12:Cr3+ garnet phosphor for blue LED chips

2018 ◽  
Vol 6 (18) ◽  
pp. 4967-4976 ◽  
Author(s):  
Liangliang Zhang ◽  
Sheng Zhang ◽  
Zhendong Hao ◽  
Xia Zhang ◽  
Guo-hui Pan ◽  
...  
Keyword(s):  
Near Infrared ◽  
High Efficiency ◽  
Broad Band ◽  
Blue Led

The garnet Ca2LuZr2Al3O12 (CLZA) is a promising broad-band NIR phosphor for blue LED chips when it is doped with Cr3+.

Chronic Laser Exposure Effects on Rabbit Retina

1972 ◽  
Vol 30 ◽  
pp. 54-55
Author(s):  
Burton B. Silver ◽  
Theodore Lawwill
Keyword(s):  
Laser Irradiation ◽  
Laser Light ◽  
Broad Band ◽  
Argon Laser ◽  
Atropine Sulfate ◽  
Ultrastructural Changes ◽  
Laser Exposure ◽  
Rabbit Retina ◽  
Histological Changes ◽  
Threshold Doses

Dutch-belted 1 to 2.5 kg anesthetized rabbits were exposed to either xenon or argon laser light administered in a broad band, designed to cover large areas of the retina. For laser exposure, the pupil was dilated with atropine sulfate 1% and pheny lephrine 10%. All of the laser generated power was within a band centered at 5145.0 Anstroms. Established threshold for 4 hour exposures to laser irradiation are in the order of 25-35 microwatts/cm2. Animals examined for ultrastructural changes received 4 hour threshold doses. These animals exhibited ERG, opthalmascopic, and histological changes consistent with threshold damage.One month following exposure the rabbits were killed with pentobarbitol. The eyes were immediately enucleated and dissected while bathed in 3% phosphate buffered gluteraldehyde.

Real-ear Masking Calibration for Portable Pure-Tone Audiometers

1984 ◽  
Vol 15 (4) ◽  
pp. 289-294
Author(s):  
Martin S. Robinette ◽  
Robert H. Brey
Keyword(s):  
Pure Tone ◽  
Broad Band ◽  
Resistive Network ◽  
Many Instruments

A transformer mixing network is described which allows the calibration of broad-band masking for portable audiometers that lack a built-in mixing network. For many instruments the transformer network is preferable to the resistive network previously published.

Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy

2004 ◽  
Vol 27 (1-3) ◽  
pp. 415-418
Author(s):  
J. Bak-Misiuk ◽  
A. Misiuk ◽  
J. Ratajczak ◽  
A. Shalimov ◽  
I. Antonova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Pressure ◽  
Layered Structures ◽  
X Ray Diffraction ◽  
X Ray
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